Heavy Doping by Bromine to Improve the Thermoelectric Properties of n-type Polycrystalline SnSe

Shan Li; Yumei Wang; Chen Chen; Xiaofang Li; Wenhua Xue; Xinyu Wang; Zongwei Zhang; Feng Cao; Jiehe Sui; Xingjun Liu; Qian Zhang

doi:10.1002/advs.201800598

Heavy Doping by Bromine to Improve the Thermoelectric Properties of n-type Polycrystalline SnSe

Shan Li, Yumei Wang, Chen Chen, Xiaofang Li, Wenhua Xue, Xinyu Wang, Zongwei Zhang, Feng Cao, Jiehe Sui, Xingjun Liu, Qian Zhang

Research output: Contribution to journal › Article › peer-review

80 Scopus citations

Abstract

Single crystal tin selenide (SnSe) has attracted much attention for its excellent thermoelectric performance. However, polycrystalline SnSe exhibits unsatisfactory figure-of-merit due to the inferior electrical properties, especially for n-type SnSe. In this work, a high concentration of Br doping (6–12 atm%) on the Se site effectively increases the Hall carrier concentration from 1.6 × 10¹⁷ cm⁻³ (p-type) in undoped SnSe to 1.3 × 10¹⁹ cm⁻³ (n-type) in Br-doped SnSe_0.88Br_0.12, leading to an increased electrical conductivity close to that of a single crystal. Combined with the decreased lattice thermal conductivity due to the enhanced phonon scattering by composition fluctuation and dislocations, a peak ZT of ≈1.3 at 773 K, together with the enhanced average ZT is obtained in SnSe_0.9Br_0.1 along the hot pressing direction.

Original language	English
Article number	1800598
Journal	Advanced Science
Volume	5
Issue number	9
DOIs	https://doi.org/10.1002/advs.201800598
State	Published - Sep 2018
Externally published	Yes

Keywords

carrier concentration
highly doping
n-type
thermoelectric

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10.1002/advs.201800598

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title = "Heavy Doping by Bromine to Improve the Thermoelectric Properties of n-type Polycrystalline SnSe",

abstract = "Single crystal tin selenide (SnSe) has attracted much attention for its excellent thermoelectric performance. However, polycrystalline SnSe exhibits unsatisfactory figure-of-merit due to the inferior electrical properties, especially for n-type SnSe. In this work, a high concentration of Br doping (6–12 atm%) on the Se site effectively increases the Hall carrier concentration from 1.6 × 1017 cm−3 (p-type) in undoped SnSe to 1.3 × 1019 cm−3 (n-type) in Br-doped SnSe0.88Br0.12, leading to an increased electrical conductivity close to that of a single crystal. Combined with the decreased lattice thermal conductivity due to the enhanced phonon scattering by composition fluctuation and dislocations, a peak ZT of ≈1.3 at 773 K, together with the enhanced average ZT is obtained in SnSe0.9Br0.1 along the hot pressing direction.",

keywords = "carrier concentration, highly doping, n-type, thermoelectric",

author = "Shan Li and Yumei Wang and Chen Chen and Xiaofang Li and Wenhua Xue and Xinyu Wang and Zongwei Zhang and Feng Cao and Jiehe Sui and Xingjun Liu and Qian Zhang",

note = "Publisher Copyright: {\textcopyright} 2018 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

year = "2018",

month = sep,

doi = "10.1002/advs.201800598",

language = "英语",

volume = "5",

journal = "Advanced Science",

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T1 - Heavy Doping by Bromine to Improve the Thermoelectric Properties of n-type Polycrystalline SnSe

AU - Li, Shan

AU - Wang, Yumei

AU - Chen, Chen

AU - Li, Xiaofang

AU - Xue, Wenhua

AU - Wang, Xinyu

AU - Zhang, Zongwei

AU - Cao, Feng

AU - Sui, Jiehe

AU - Liu, Xingjun

AU - Zhang, Qian

PY - 2018/9

Y1 - 2018/9

N2 - Single crystal tin selenide (SnSe) has attracted much attention for its excellent thermoelectric performance. However, polycrystalline SnSe exhibits unsatisfactory figure-of-merit due to the inferior electrical properties, especially for n-type SnSe. In this work, a high concentration of Br doping (6–12 atm%) on the Se site effectively increases the Hall carrier concentration from 1.6 × 1017 cm−3 (p-type) in undoped SnSe to 1.3 × 1019 cm−3 (n-type) in Br-doped SnSe0.88Br0.12, leading to an increased electrical conductivity close to that of a single crystal. Combined with the decreased lattice thermal conductivity due to the enhanced phonon scattering by composition fluctuation and dislocations, a peak ZT of ≈1.3 at 773 K, together with the enhanced average ZT is obtained in SnSe0.9Br0.1 along the hot pressing direction.

AB - Single crystal tin selenide (SnSe) has attracted much attention for its excellent thermoelectric performance. However, polycrystalline SnSe exhibits unsatisfactory figure-of-merit due to the inferior electrical properties, especially for n-type SnSe. In this work, a high concentration of Br doping (6–12 atm%) on the Se site effectively increases the Hall carrier concentration from 1.6 × 1017 cm−3 (p-type) in undoped SnSe to 1.3 × 1019 cm−3 (n-type) in Br-doped SnSe0.88Br0.12, leading to an increased electrical conductivity close to that of a single crystal. Combined with the decreased lattice thermal conductivity due to the enhanced phonon scattering by composition fluctuation and dislocations, a peak ZT of ≈1.3 at 773 K, together with the enhanced average ZT is obtained in SnSe0.9Br0.1 along the hot pressing direction.

KW - carrier concentration

KW - highly doping

KW - n-type

KW - thermoelectric

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U2 - 10.1002/advs.201800598

DO - 10.1002/advs.201800598

M3 - 文章

AN - SCOPUS:85051071912

SN - 2198-3844

VL - 5

JO - Advanced Science

JF - Advanced Science

IS - 9

M1 - 1800598

ER -

Heavy Doping by Bromine to Improve the Thermoelectric Properties of n-type Polycrystalline SnSe

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Keywords

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