Growth of ZnTe Semiconductor Crystal Via a Te Flux Zone Melting Method and Characterization of Its Properties

Min Jin, Feng He, Shuying Zheng, Yadong Xu, Yan Peng, Xiufei Chen, Xiangang Xu

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

In this work, a kind of II;-VI group ZnTe semiconductor crystal is successfully grown using a Te flux zone melting method from Zn: Te = 3: 7 mole ratio solution. The crystal has standard F43m cubic space group and the a/b/c lattice constants are all calculated to be 6.105 Å. Energy dispersive spectroscopy analysis confirms it has quasistoichiometric ratio and the Zn/Te elements are distributed in the material homogeneously. The polished 1.0 mm thickness (110) wafer exhibits a highest ≈64.5% transmittance near 2400 nm wavelength and the bandgap Eg is deduced as 2.223 eV. ZnTe crystal shows a heavy volatilization start from 910 °C and the weight losing speed is about ≈1.45% min−1. The thermal conductivity k displays good repeatability in the cooling and heating stages, the k value is about 15.8 Wm−1 K−1 at room temperature and is deceased to 3.53 Wm−1 K−1 under 500 °C. These results would be of great reference when ZnTe crystal is used for device design and application in the future.

Original languageEnglish
Article number2100279
JournalCrystal Research and Technology
Volume57
Issue number10
DOIs
StatePublished - Oct 2022

Keywords

  • ZnTe crystal
  • thermal conductivity
  • transmittance
  • volatilization

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