TY - JOUR
T1 - Growth and characterization of room temperature radiation detection material Cd0.95Mg0.05Te
AU - Yu, Pengfei
AU - Jiang, Biru
AU - Chen, Yongren
AU - Qi, Yongwu
AU - Wang, Lei
AU - Tang, Jia
AU - Lu, Hanyue
AU - Liu, Yuanpei
AU - Chen, Yongyang
AU - Liu, Wenfei
AU - Zheng, Jiahong
AU - Luan, Lijun
AU - Jie, Wanqi
N1 - Publisher Copyright:
© 2020 Elsevier B.V.
PY - 2020/8/1
Y1 - 2020/8/1
N2 - Recently, researchers were interesting in exploring alternative materials for well-studied CdZnTe which was the key material of radiation detection. Cadmium Magnesium Telluride (Cd1-xMgxTe) crystal was regarded as promising one for room temperature X-ray and gamma-ray detectors due to some potential advantages. In this paper, two large-size Cd0.95Mg0.05Te ingots with 30 mm diameter and over 100 mm length were successfully grown by a modified vertical Bridgman method. Two modifications, including Cd excess or Te-rich condition and the accelerated crucible rotation technique (ACRT), were applied in growing process to decrease defects, enhance resistivity and homogenize component distribution. The results indicated that both ingots had a cubic zinc-blende structure. The distribution of Mg element in the ingots along axial direction was very homogeneous. The energy band gap of Cd0.95Mg0.05Te was close to Cd0.9Zn0.1Te. Low density of Te inclusions (103 cm− 3 order of magnitudes) and high IR transmittance (over 60%) showed the good crystal quality. Raman scattering spectroscopy also showed a good crystal quality for Cd0.95Mg0.05Te crystals. Thus, Cd0.95Mg0.05Te crystals could be a promising radiation detector material.
AB - Recently, researchers were interesting in exploring alternative materials for well-studied CdZnTe which was the key material of radiation detection. Cadmium Magnesium Telluride (Cd1-xMgxTe) crystal was regarded as promising one for room temperature X-ray and gamma-ray detectors due to some potential advantages. In this paper, two large-size Cd0.95Mg0.05Te ingots with 30 mm diameter and over 100 mm length were successfully grown by a modified vertical Bridgman method. Two modifications, including Cd excess or Te-rich condition and the accelerated crucible rotation technique (ACRT), were applied in growing process to decrease defects, enhance resistivity and homogenize component distribution. The results indicated that both ingots had a cubic zinc-blende structure. The distribution of Mg element in the ingots along axial direction was very homogeneous. The energy band gap of Cd0.95Mg0.05Te was close to Cd0.9Zn0.1Te. Low density of Te inclusions (103 cm− 3 order of magnitudes) and high IR transmittance (over 60%) showed the good crystal quality. Raman scattering spectroscopy also showed a good crystal quality for Cd0.95Mg0.05Te crystals. Thus, Cd0.95Mg0.05Te crystals could be a promising radiation detector material.
KW - A1. Characterization
KW - A2. Bridgman technique
KW - B1. Cadmium compounds
KW - B2. Semiconducting II-VI materials
UR - http://www.scopus.com/inward/record.url?scp=85084739572&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2020.125719
DO - 10.1016/j.jcrysgro.2020.125719
M3 - 文章
AN - SCOPUS:85084739572
SN - 0022-0248
VL - 543
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
M1 - 125719
ER -