Growth and characterization of In doped Cd0.8Mn0.2Te single crystal

Jijun Zhang; Wanqi Jie; Tao Wang; Dongmei Zeng; Bo Yang

doi:10.1016/j.jcrysgro.2007.03.044

Growth and characterization of In doped Cd_0.8Mn_0.2Te single crystal

Jijun Zhang, Wanqi Jie, Tao Wang, Dongmei Zeng, Bo Yang

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

The Cd_1-xMn_xTe crystal is believed to be a good candidate to compete with Cd_1-xZn_xTe in the X-ray and γ-ray detector application. In this paper, we present the growth of indium (In) doped Cd_0.8Mn_0.2Te (CdMnTe:In) ingot by the vertical Bridgman method. The crystalline structure and quality was verified by X-ray diffraction and double-crystal rocking curve measurement and etch pits density measurement (EPD). The results showed a pure cubic zinc blende structure throughout the ingot with the FWHM of 40-80 arcsec and EPD of 10⁴-10⁵ cm^-2, indicating a high crystalline perfection. The In dopant distribution in the ingot was analyzed by inductively coupled plasma-mass spectroscopy (ICP-MS). The segregation coefficient of In in CdMnTe was evaluated to be 0.075. The effects of In-doping on the properties of CdMnTe single crystal were analyzed. Current-voltage (I-V) measurement reveals that CdMnTe:In has the resistivity 1-3×10⁹ Ω cm, which is three orders higher than undoped CdMnTe. IR transmission measurement exhibits that In-doping results in remarkable reduction of IR transmittance of CdMnTe crystal due to lattice absorption.

Original language	English
Pages (from-to)	33-38
Number of pages	6
Journal	Journal of Crystal Growth
Volume	306
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2007.03.044
State	Published - 1 Aug 2007

Keywords

A1. Doping
A1. Segregation
A1. X-ray diffraction
A2. Bridgman technique
B2. Semiconducting II-VI materials

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10.1016/j.jcrysgro.2007.03.044

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title = "Growth and characterization of In doped Cd0.8Mn0.2Te single crystal",

abstract = "The Cd1-xMnxTe crystal is believed to be a good candidate to compete with Cd1-xZnxTe in the X-ray and γ-ray detector application. In this paper, we present the growth of indium (In) doped Cd0.8Mn0.2Te (CdMnTe:In) ingot by the vertical Bridgman method. The crystalline structure and quality was verified by X-ray diffraction and double-crystal rocking curve measurement and etch pits density measurement (EPD). The results showed a pure cubic zinc blende structure throughout the ingot with the FWHM of 40-80 arcsec and EPD of 104-105 cm-2, indicating a high crystalline perfection. The In dopant distribution in the ingot was analyzed by inductively coupled plasma-mass spectroscopy (ICP-MS). The segregation coefficient of In in CdMnTe was evaluated to be 0.075. The effects of In-doping on the properties of CdMnTe single crystal were analyzed. Current-voltage (I-V) measurement reveals that CdMnTe:In has the resistivity 1-3×109 Ω cm, which is three orders higher than undoped CdMnTe. IR transmission measurement exhibits that In-doping results in remarkable reduction of IR transmittance of CdMnTe crystal due to lattice absorption.",

keywords = "A1. Doping, A1. Segregation, A1. X-ray diffraction, A2. Bridgman technique, B2. Semiconducting II-VI materials",

author = "Jijun Zhang and Wanqi Jie and Tao Wang and Dongmei Zeng and Bo Yang",

year = "2007",

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doi = "10.1016/j.jcrysgro.2007.03.044",

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T1 - Growth and characterization of In doped Cd0.8Mn0.2Te single crystal

AU - Zhang, Jijun

AU - Jie, Wanqi

AU - Wang, Tao

AU - Zeng, Dongmei

AU - Yang, Bo

PY - 2007/8/1

Y1 - 2007/8/1

N2 - The Cd1-xMnxTe crystal is believed to be a good candidate to compete with Cd1-xZnxTe in the X-ray and γ-ray detector application. In this paper, we present the growth of indium (In) doped Cd0.8Mn0.2Te (CdMnTe:In) ingot by the vertical Bridgman method. The crystalline structure and quality was verified by X-ray diffraction and double-crystal rocking curve measurement and etch pits density measurement (EPD). The results showed a pure cubic zinc blende structure throughout the ingot with the FWHM of 40-80 arcsec and EPD of 104-105 cm-2, indicating a high crystalline perfection. The In dopant distribution in the ingot was analyzed by inductively coupled plasma-mass spectroscopy (ICP-MS). The segregation coefficient of In in CdMnTe was evaluated to be 0.075. The effects of In-doping on the properties of CdMnTe single crystal were analyzed. Current-voltage (I-V) measurement reveals that CdMnTe:In has the resistivity 1-3×109 Ω cm, which is three orders higher than undoped CdMnTe. IR transmission measurement exhibits that In-doping results in remarkable reduction of IR transmittance of CdMnTe crystal due to lattice absorption.

AB - The Cd1-xMnxTe crystal is believed to be a good candidate to compete with Cd1-xZnxTe in the X-ray and γ-ray detector application. In this paper, we present the growth of indium (In) doped Cd0.8Mn0.2Te (CdMnTe:In) ingot by the vertical Bridgman method. The crystalline structure and quality was verified by X-ray diffraction and double-crystal rocking curve measurement and etch pits density measurement (EPD). The results showed a pure cubic zinc blende structure throughout the ingot with the FWHM of 40-80 arcsec and EPD of 104-105 cm-2, indicating a high crystalline perfection. The In dopant distribution in the ingot was analyzed by inductively coupled plasma-mass spectroscopy (ICP-MS). The segregation coefficient of In in CdMnTe was evaluated to be 0.075. The effects of In-doping on the properties of CdMnTe single crystal were analyzed. Current-voltage (I-V) measurement reveals that CdMnTe:In has the resistivity 1-3×109 Ω cm, which is three orders higher than undoped CdMnTe. IR transmission measurement exhibits that In-doping results in remarkable reduction of IR transmittance of CdMnTe crystal due to lattice absorption.

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KW - A1. Segregation

KW - A1. X-ray diffraction

KW - A2. Bridgman technique

KW - B2. Semiconducting II-VI materials

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ER -

Growth and characterization of In doped Cd_0.8Mn_0.2Te single crystal

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Keywords

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