Ferroelectricity-like Polarization and Metallicity at GdAlO3/SrTiO3 Heterointerfaces

Ming Li; Huijuan Dong; Xiangyang Wei; Ruishu Yang; Hang Yin; Shuanhu Wang; Kexin Jin

doi:10.1021/acs.jpcc.1c08232

Ferroelectricity-like Polarization and Metallicity at GdAlO₃/SrTiO₃ Heterointerfaces

Ming Li, Huijuan Dong, Xiangyang Wei, Ruishu Yang, Hang Yin, Shuanhu Wang, Kexin Jin

School of Physical Science and Technology

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Application of multifunctional integrated devices represents a main trend in the future. However, it is still a great challenge to realize ferroelectric metals in a single system. Here, we report the coexistence of metallicity and ferroelectricity-like polarization at GdAlO₃/SrTiO₃ heterointerfaces. The results show that the asymmetric bistable polarization in the GdAlO₃ film is attributed to the spontaneous polarization of oxygen vacancies. Furthermore, the transport property of GdAlO₃/SrTiO₃ heterointerfaces can be significantly manipulated by switching the polarization state. It is observed that the switchable conductance significantly improves under the influence of a polarization state at 6 V. Its change in the resistance is about 17.2% under 10 V, which accelerates the commercial application of oxide devices.

Original language	English
Pages (from-to)	611-616
Number of pages	6
Journal	Journal of Physical Chemistry C
Volume	126
Issue number	1
DOIs	https://doi.org/10.1021/acs.jpcc.1c08232
State	Published - 13 Jan 2022

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title = "Ferroelectricity-like Polarization and Metallicity at GdAlO3/SrTiO3 Heterointerfaces",

abstract = "Application of multifunctional integrated devices represents a main trend in the future. However, it is still a great challenge to realize ferroelectric metals in a single system. Here, we report the coexistence of metallicity and ferroelectricity-like polarization at GdAlO3/SrTiO3 heterointerfaces. The results show that the asymmetric bistable polarization in the GdAlO3 film is attributed to the spontaneous polarization of oxygen vacancies. Furthermore, the transport property of GdAlO3/SrTiO3 heterointerfaces can be significantly manipulated by switching the polarization state. It is observed that the switchable conductance significantly improves under the influence of a polarization state at 6 V. Its change in the resistance is about 17.2% under 10 V, which accelerates the commercial application of oxide devices.",

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T1 - Ferroelectricity-like Polarization and Metallicity at GdAlO3/SrTiO3 Heterointerfaces

AU - Li, Ming

AU - Dong, Huijuan

AU - Wei, Xiangyang

AU - Yang, Ruishu

AU - Yin, Hang

AU - Wang, Shuanhu

AU - Jin, Kexin

PY - 2022/1/13

Y1 - 2022/1/13

N2 - Application of multifunctional integrated devices represents a main trend in the future. However, it is still a great challenge to realize ferroelectric metals in a single system. Here, we report the coexistence of metallicity and ferroelectricity-like polarization at GdAlO3/SrTiO3 heterointerfaces. The results show that the asymmetric bistable polarization in the GdAlO3 film is attributed to the spontaneous polarization of oxygen vacancies. Furthermore, the transport property of GdAlO3/SrTiO3 heterointerfaces can be significantly manipulated by switching the polarization state. It is observed that the switchable conductance significantly improves under the influence of a polarization state at 6 V. Its change in the resistance is about 17.2% under 10 V, which accelerates the commercial application of oxide devices.

AB - Application of multifunctional integrated devices represents a main trend in the future. However, it is still a great challenge to realize ferroelectric metals in a single system. Here, we report the coexistence of metallicity and ferroelectricity-like polarization at GdAlO3/SrTiO3 heterointerfaces. The results show that the asymmetric bistable polarization in the GdAlO3 film is attributed to the spontaneous polarization of oxygen vacancies. Furthermore, the transport property of GdAlO3/SrTiO3 heterointerfaces can be significantly manipulated by switching the polarization state. It is observed that the switchable conductance significantly improves under the influence of a polarization state at 6 V. Its change in the resistance is about 17.2% under 10 V, which accelerates the commercial application of oxide devices.

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Ferroelectricity-like Polarization and Metallicity at GdAlO₃/SrTiO₃ Heterointerfaces

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