TY - GEN
T1 - Fabrication of a novel resonant pressure sensor based on SOI wafer
AU - Ma, Zhibo
AU - Ren, Sen
AU - Qiao, Dayong
AU - Yuan, Weizheng
PY - 2008
Y1 - 2008
N2 - Based on the silicon-on-insulator (SOI) silicon, a novel resonant pressure sensor for atmosphere pressure detection is designed and fabricated. The resonator suspended by four beams at four pedestals on the diaphragm is encapsulated between two glass lids. The diaphragm shape changes with the change of ambient gas pressure; thereby the resonator's nature frequency also is changes. To prevent the undesired etching of resonator during the wet etching, a protective process using silicon nitride and silicon oxide is adopted. Experiments show that after wet etching 10 hours in tetramethyl ammonium hydroxide (TMAH) solution, the resonator is successfully released. This protection technology shows a high practical value especially for the release of a movable microstructure by wet silicon etchants. Initial performance test results of the device yield a natural frequency of 9.932 KHz at atmospheric pressure and the Q-factor of 34 rising to over 7293 in high vacuum(<10 Pa). The relative pressure sensitivity of the sensor is measured to be 5.88% for a 10μm diaphragm.
AB - Based on the silicon-on-insulator (SOI) silicon, a novel resonant pressure sensor for atmosphere pressure detection is designed and fabricated. The resonator suspended by four beams at four pedestals on the diaphragm is encapsulated between two glass lids. The diaphragm shape changes with the change of ambient gas pressure; thereby the resonator's nature frequency also is changes. To prevent the undesired etching of resonator during the wet etching, a protective process using silicon nitride and silicon oxide is adopted. Experiments show that after wet etching 10 hours in tetramethyl ammonium hydroxide (TMAH) solution, the resonator is successfully released. This protection technology shows a high practical value especially for the release of a movable microstructure by wet silicon etchants. Initial performance test results of the device yield a natural frequency of 9.932 KHz at atmospheric pressure and the Q-factor of 34 rising to over 7293 in high vacuum(<10 Pa). The relative pressure sensitivity of the sensor is measured to be 5.88% for a 10μm diaphragm.
UR - http://www.scopus.com/inward/record.url?scp=69949180788&partnerID=8YFLogxK
U2 - 10.1115/MicroNano2008-70079
DO - 10.1115/MicroNano2008-70079
M3 - 会议稿件
AN - SCOPUS:69949180788
SN - 0791842940
SN - 9780791842942
T3 - 2008 Proceedings of the ASME - 2nd International Conference on Integration and Commercialization of Micro and Nanosystems, MicroNano 2008
SP - 593
EP - 596
BT - 2008 Proceedings of the ASME - 2nd International Conference on Integration and Commercialization of Micro and Nanosystems, MicroNano 2008
T2 - 2008 ASME 2nd International Conference on Integration and Commercialization of Micro and Nanosystems, MicroNano 2008
Y2 - 3 June 2008 through 5 June 2008
ER -