Fabrication and characterization of copper-indium-diselenide (CuInSe2, CIS) thin film using one-step electro-deposition process

Libo Li; Yue Ma; Guanxiong Gao; Wentao Wang; Shaowen Guo; Jun You; Jingchen Xie

doi:10.1016/j.jallcom.2015.11.005

Fabrication and characterization of copper-indium-diselenide (CuInSe₂, CIS) thin film using one-step electro-deposition process

Libo Li, Yue Ma, Guanxiong Gao, Wentao Wang, Shaowen Guo, Jun You, Jingchen Xie

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We had successfully fabricated CuInSe₂ (CIS) thin film by electro-deposition technique. Electro-deposited ternary selenide precursor was thermally annealed under nitrogen conditions to form CuInSe₂ films. The structure, composition, chemical state and optical characterization of CuInSe₂ films were measured using several techniques, including Scanning electron microscopy (SEM), Atomic force microscopy (AFM), Atomic emission spectroscopy (AES), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Ultraviolet Spectrophotometry (UV) and electrochemical workstation. The results showed that the CuInSe₂ thin films formed using electro-deposition had dense grain structure whose size was various with the increase of the deposited voltage and annealing temperature. The band gap of CuInSe₂ was 1.43 eV when deposition voltage was 1.7 V, and CIS film exhibited the most excellent property.

Original language	English
Pages (from-to)	774-779
Number of pages	6
Journal	Journal of Alloys and Compounds
Volume	658
DOIs	https://doi.org/10.1016/j.jallcom.2015.11.005
State	Published - 15 Feb 2016
Externally published	Yes

Keywords

CuInSe
Electro-deposition
Photovoltaic
Thin film solar cells

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.jallcom.2015.11.005

Cite this

@article{42137e0fce8c44b29290a9a5282ce408,

title = "Fabrication and characterization of copper-indium-diselenide (CuInSe2, CIS) thin film using one-step electro-deposition process",

abstract = "We had successfully fabricated CuInSe2 (CIS) thin film by electro-deposition technique. Electro-deposited ternary selenide precursor was thermally annealed under nitrogen conditions to form CuInSe2 films. The structure, composition, chemical state and optical characterization of CuInSe2 films were measured using several techniques, including Scanning electron microscopy (SEM), Atomic force microscopy (AFM), Atomic emission spectroscopy (AES), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Ultraviolet Spectrophotometry (UV) and electrochemical workstation. The results showed that the CuInSe2 thin films formed using electro-deposition had dense grain structure whose size was various with the increase of the deposited voltage and annealing temperature. The band gap of CuInSe2 was 1.43 eV when deposition voltage was 1.7 V, and CIS film exhibited the most excellent property.",

keywords = "CuInSe, Electro-deposition, Photovoltaic, Thin film solar cells",

author = "Libo Li and Yue Ma and Guanxiong Gao and Wentao Wang and Shaowen Guo and Jun You and Jingchen Xie",

note = "Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.",

year = "2016",

month = feb,

day = "15",

doi = "10.1016/j.jallcom.2015.11.005",

language = "英语",

volume = "658",

pages = "774--779",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Fabrication and characterization of copper-indium-diselenide (CuInSe2, CIS) thin film using one-step electro-deposition process

AU - Li, Libo

AU - Ma, Yue

AU - Gao, Guanxiong

AU - Wang, Wentao

AU - Guo, Shaowen

AU - You, Jun

AU - Xie, Jingchen

PY - 2016/2/15

Y1 - 2016/2/15

N2 - We had successfully fabricated CuInSe2 (CIS) thin film by electro-deposition technique. Electro-deposited ternary selenide precursor was thermally annealed under nitrogen conditions to form CuInSe2 films. The structure, composition, chemical state and optical characterization of CuInSe2 films were measured using several techniques, including Scanning electron microscopy (SEM), Atomic force microscopy (AFM), Atomic emission spectroscopy (AES), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Ultraviolet Spectrophotometry (UV) and electrochemical workstation. The results showed that the CuInSe2 thin films formed using electro-deposition had dense grain structure whose size was various with the increase of the deposited voltage and annealing temperature. The band gap of CuInSe2 was 1.43 eV when deposition voltage was 1.7 V, and CIS film exhibited the most excellent property.

AB - We had successfully fabricated CuInSe2 (CIS) thin film by electro-deposition technique. Electro-deposited ternary selenide precursor was thermally annealed under nitrogen conditions to form CuInSe2 films. The structure, composition, chemical state and optical characterization of CuInSe2 films were measured using several techniques, including Scanning electron microscopy (SEM), Atomic force microscopy (AFM), Atomic emission spectroscopy (AES), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Ultraviolet Spectrophotometry (UV) and electrochemical workstation. The results showed that the CuInSe2 thin films formed using electro-deposition had dense grain structure whose size was various with the increase of the deposited voltage and annealing temperature. The band gap of CuInSe2 was 1.43 eV when deposition voltage was 1.7 V, and CIS film exhibited the most excellent property.

KW - CuInSe

KW - Electro-deposition

KW - Photovoltaic

KW - Thin film solar cells

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U2 - 10.1016/j.jallcom.2015.11.005

DO - 10.1016/j.jallcom.2015.11.005

M3 - 文章

AN - SCOPUS:84947571170

SN - 0925-8388

VL - 658

SP - 774

EP - 779

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -