Erratum: Effects of Ga-Te interface layer on the potential barrier height of CdTe/GaAs heterointerface (Physical Chemistry Chemical Physics (2016) 18 (2639-2645))

Shouzhi Xi; Wanqi Jie; Gangqiang Zha; Yanyan Yuan; Tao Wang; Wenhua Zhang; Junfa Zhu; Lingyan Xu; Yadong Xu; Jie Su; Hao Zhang; Yaxu Gu; Jiawei Li; Jie Ren; Qinghua Zhao

doi:10.1039/c6cp90030e

Erratum: Effects of Ga-Te interface layer on the potential barrier height of CdTe/GaAs heterointerface (Physical Chemistry Chemical Physics (2016) 18 (2639-2645))

Shouzhi Xi, Wanqi Jie, Gangqiang Zha, Yanyan Yuan, Tao Wang, Wenhua Zhang, Junfa Zhu, Lingyan Xu, Yadong Xu, Jie Su, Hao Zhang, Yaxu Gu, Jiawei Li, Jie Ren, Qinghua Zhao

School of Materials Sience and Engineering

Research output: Contribution to journal › Comment/debate

Original language	English
Pages (from-to)	5658
Number of pages	1
Journal	Physical Chemistry Chemical Physics
Volume	18
Issue number	7
DOIs	https://doi.org/10.1039/c6cp90030e
State	Published - 2016

Access to Document

10.1039/c6cp90030e

Cite this

Xi, S., Jie, W., Zha, G., Yuan, Y., Wang, T., Zhang, W., Zhu, J., Xu, L., Xu, Y., Su, J., Zhang, H., Gu, Y., Li, J., Ren, J., & Zhao, Q. (2016). Erratum: Effects of Ga-Te interface layer on the potential barrier height of CdTe/GaAs heterointerface (Physical Chemistry Chemical Physics (2016) 18 (2639-2645)). Physical Chemistry Chemical Physics, 18(7), 5658. https://doi.org/10.1039/c6cp90030e

@article{b755ab7019b546e196ee0e59216e6876,

title = "Erratum: Effects of Ga-Te interface layer on the potential barrier height of CdTe/GaAs heterointerface (Physical Chemistry Chemical Physics (2016) 18 (2639-2645))",

author = "Shouzhi Xi and Wanqi Jie and Gangqiang Zha and Yanyan Yuan and Tao Wang and Wenhua Zhang and Junfa Zhu and Lingyan Xu and Yadong Xu and Jie Su and Hao Zhang and Yaxu Gu and Jiawei Li and Jie Ren and Qinghua Zhao",

year = "2016",

doi = "10.1039/c6cp90030e",

language = "英语",

volume = "18",

pages = "5658",

journal = "Physical Chemistry Chemical Physics",

issn = "1463-9076",

publisher = "Royal Society of Chemistry",

number = "7",

}

Xi, S, Jie, W , Zha, G, Yuan, Y, Wang, T, Zhang, W, Zhu, J, Xu, L, Xu, Y, Su, J, Zhang, H, Gu, Y, Li, J, Ren, J & Zhao, Q 2016, 'Erratum: Effects of Ga-Te interface layer on the potential barrier height of CdTe/GaAs heterointerface (Physical Chemistry Chemical Physics (2016) 18 (2639-2645))', Physical Chemistry Chemical Physics, vol. 18, no. 7, pp. 5658. https://doi.org/10.1039/c6cp90030e

TY - JOUR

T1 - Erratum

T2 - Effects of Ga-Te interface layer on the potential barrier height of CdTe/GaAs heterointerface (Physical Chemistry Chemical Physics (2016) 18 (2639-2645))

AU - Xi, Shouzhi

AU - Jie, Wanqi

AU - Zha, Gangqiang

AU - Yuan, Yanyan

AU - Wang, Tao

AU - Zhang, Wenhua

AU - Zhu, Junfa

AU - Xu, Lingyan

AU - Xu, Yadong

AU - Su, Jie

AU - Zhang, Hao

AU - Gu, Yaxu

AU - Li, Jiawei

AU - Ren, Jie

AU - Zhao, Qinghua

PY - 2016

Y1 - 2016

UR - http://www.scopus.com/inward/record.url?scp=84958206148&partnerID=8YFLogxK

U2 - 10.1039/c6cp90030e

DO - 10.1039/c6cp90030e

M3 - 评论/辩论

AN - SCOPUS:84958206148

SN - 1463-9076

VL - 18

SP - 5658

JO - Physical Chemistry Chemical Physics

JF - Physical Chemistry Chemical Physics

IS - 7

ER -

Erratum: Effects of Ga-Te interface layer on the potential barrier height of CdTe/GaAs heterointerface (Physical Chemistry Chemical Physics (2016) 18 (2639-2645))

Access to Document

Other files and links

Cite this