Enhanced thermoelectric performance in polycrystalline N-type Pr-doped SnSe by hot forging

Shan Li; Fanghao Zhang; Chen Chen; Xiaofang Li; Feng Cao; Jiehe Sui; Xingjun Liu; Zhifeng Ren; Qian Zhang

doi:10.1016/j.actamat.2020.03.009

Enhanced thermoelectric performance in polycrystalline N-type Pr-doped SnSe by hot forging

Shan Li, Fanghao Zhang, Chen Chen, Xiaofang Li, Feng Cao, Jiehe Sui, Xingjun Liu, Zhifeng Ren, Qian Zhang

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

SnSe has attracted significant attention for use in thermoelectric devices due to its reported ultrahigh figure-of-merit ZT in both p- and n-type single crystals, which inspired us to explore the thermoelectric properties of SnSe polycrystals for potential large-scale applications. Here, n-type Sn_1- _xPr_xSe polycrystals are prepared by ball milling and hot pressing. A maximum ZT value of ~0.7 at 773 K is achieved in Sn_0.97Pr_0.03Se due to the enhanced electron concentration and electrical conductivity resulting from Pr doping at the Sn site. Through hot forging for a higher degree of orientation, a lowered thermal conductivity is obtained along the hot-pressing direction, contributing to an enhanced ZT value of ~0.9 at 773 K in this direction. This study paves a new way for optimization of n-type SnSe by cation-site lanthanide doping.

Original language	English
Pages (from-to)	1-7
Number of pages	7
Journal	Acta Materialia
Volume	190
DOIs	https://doi.org/10.1016/j.actamat.2020.03.009
State	Published - 15 May 2020
Externally published	Yes

Keywords

Hot forging
N-type
SnSe
Thermoelectric

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10.1016/j.actamat.2020.03.009

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title = "Enhanced thermoelectric performance in polycrystalline N-type Pr-doped SnSe by hot forging",

abstract = "SnSe has attracted significant attention for use in thermoelectric devices due to its reported ultrahigh figure-of-merit ZT in both p- and n-type single crystals, which inspired us to explore the thermoelectric properties of SnSe polycrystals for potential large-scale applications. Here, n-type Sn1- xPrxSe polycrystals are prepared by ball milling and hot pressing. A maximum ZT value of ~0.7 at 773 K is achieved in Sn0.97Pr0.03Se due to the enhanced electron concentration and electrical conductivity resulting from Pr doping at the Sn site. Through hot forging for a higher degree of orientation, a lowered thermal conductivity is obtained along the hot-pressing direction, contributing to an enhanced ZT value of ~0.9 at 773 K in this direction. This study paves a new way for optimization of n-type SnSe by cation-site lanthanide doping.",

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author = "Shan Li and Fanghao Zhang and Chen Chen and Xiaofang Li and Feng Cao and Jiehe Sui and Xingjun Liu and Zhifeng Ren and Qian Zhang",

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T1 - Enhanced thermoelectric performance in polycrystalline N-type Pr-doped SnSe by hot forging

AU - Li, Shan

AU - Zhang, Fanghao

AU - Chen, Chen

AU - Li, Xiaofang

AU - Cao, Feng

AU - Sui, Jiehe

AU - Liu, Xingjun

AU - Ren, Zhifeng

AU - Zhang, Qian

PY - 2020/5/15

Y1 - 2020/5/15

N2 - SnSe has attracted significant attention for use in thermoelectric devices due to its reported ultrahigh figure-of-merit ZT in both p- and n-type single crystals, which inspired us to explore the thermoelectric properties of SnSe polycrystals for potential large-scale applications. Here, n-type Sn1- xPrxSe polycrystals are prepared by ball milling and hot pressing. A maximum ZT value of ~0.7 at 773 K is achieved in Sn0.97Pr0.03Se due to the enhanced electron concentration and electrical conductivity resulting from Pr doping at the Sn site. Through hot forging for a higher degree of orientation, a lowered thermal conductivity is obtained along the hot-pressing direction, contributing to an enhanced ZT value of ~0.9 at 773 K in this direction. This study paves a new way for optimization of n-type SnSe by cation-site lanthanide doping.

AB - SnSe has attracted significant attention for use in thermoelectric devices due to its reported ultrahigh figure-of-merit ZT in both p- and n-type single crystals, which inspired us to explore the thermoelectric properties of SnSe polycrystals for potential large-scale applications. Here, n-type Sn1- xPrxSe polycrystals are prepared by ball milling and hot pressing. A maximum ZT value of ~0.7 at 773 K is achieved in Sn0.97Pr0.03Se due to the enhanced electron concentration and electrical conductivity resulting from Pr doping at the Sn site. Through hot forging for a higher degree of orientation, a lowered thermal conductivity is obtained along the hot-pressing direction, contributing to an enhanced ZT value of ~0.9 at 773 K in this direction. This study paves a new way for optimization of n-type SnSe by cation-site lanthanide doping.

KW - Hot forging

KW - N-type

KW - SnSe

KW - Thermoelectric

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DO - 10.1016/j.actamat.2020.03.009

M3 - 文章

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SN - 1359-6454

VL - 190

SP - 1

EP - 7

JO - Acta Materialia

JF - Acta Materialia

ER -

Enhanced thermoelectric performance in polycrystalline N-type Pr-doped SnSe by hot forging

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Keywords

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