Enhanced resistive switching behaviors of HfO2:Cu film with annealing process

Tingting Guo; Tingting Tan; Zhengtang Liu

doi:10.1016/j.vacuum.2015.01.006

Enhanced resistive switching behaviors of HfO₂:Cu film with annealing process

Tingting Guo, Tingting Tan, Zhengtang Liu

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The effects of Cu doping and annealing process on crystal structure and resistive switching (RS) characteristics of HfO₂ films fabricated by RF magnetron sputtering were investigated. The chemical compositions of the films were characterized by X-ray photoelectron spectroscopy. The defects induced by Cu dopants played an important role on the RS characteristics. The enhanced ON/OFF ratio and reduced switch voltages were demonstrated for the doped film. The further annealing process for HfO₂:Cu film not only decreased the switch voltages but also improved the distribution of the switch voltages of the film. The RS behaviors of HfO₂:Cu films can be well explained by space charge limited current (SCLC) effect.

Original language	English
Pages (from-to)	78-81
Number of pages	4
Journal	Vacuum
Volume	114
DOIs	https://doi.org/10.1016/j.vacuum.2015.01.006
State	Published - Apr 2015

Keywords

Annealing process
HfO:Cu film
Resistive switching
SCLC

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10.1016/j.vacuum.2015.01.006

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title = "Enhanced resistive switching behaviors of HfO2:Cu film with annealing process",

abstract = "The effects of Cu doping and annealing process on crystal structure and resistive switching (RS) characteristics of HfO2 films fabricated by RF magnetron sputtering were investigated. The chemical compositions of the films were characterized by X-ray photoelectron spectroscopy. The defects induced by Cu dopants played an important role on the RS characteristics. The enhanced ON/OFF ratio and reduced switch voltages were demonstrated for the doped film. The further annealing process for HfO2:Cu film not only decreased the switch voltages but also improved the distribution of the switch voltages of the film. The RS behaviors of HfO2:Cu films can be well explained by space charge limited current (SCLC) effect.",

keywords = "Annealing process, HfO:Cu film, Resistive switching, SCLC",

author = "Tingting Guo and Tingting Tan and Zhengtang Liu",

year = "2015",

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doi = "10.1016/j.vacuum.2015.01.006",

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volume = "114",

pages = "78--81",

journal = "Vacuum",

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T1 - Enhanced resistive switching behaviors of HfO2:Cu film with annealing process

AU - Guo, Tingting

AU - Tan, Tingting

AU - Liu, Zhengtang

PY - 2015/4

Y1 - 2015/4

N2 - The effects of Cu doping and annealing process on crystal structure and resistive switching (RS) characteristics of HfO2 films fabricated by RF magnetron sputtering were investigated. The chemical compositions of the films were characterized by X-ray photoelectron spectroscopy. The defects induced by Cu dopants played an important role on the RS characteristics. The enhanced ON/OFF ratio and reduced switch voltages were demonstrated for the doped film. The further annealing process for HfO2:Cu film not only decreased the switch voltages but also improved the distribution of the switch voltages of the film. The RS behaviors of HfO2:Cu films can be well explained by space charge limited current (SCLC) effect.

AB - The effects of Cu doping and annealing process on crystal structure and resistive switching (RS) characteristics of HfO2 films fabricated by RF magnetron sputtering were investigated. The chemical compositions of the films were characterized by X-ray photoelectron spectroscopy. The defects induced by Cu dopants played an important role on the RS characteristics. The enhanced ON/OFF ratio and reduced switch voltages were demonstrated for the doped film. The further annealing process for HfO2:Cu film not only decreased the switch voltages but also improved the distribution of the switch voltages of the film. The RS behaviors of HfO2:Cu films can be well explained by space charge limited current (SCLC) effect.

KW - Annealing process

KW - HfO:Cu film

KW - Resistive switching

KW - SCLC

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DO - 10.1016/j.vacuum.2015.01.006

M3 - 文章

AN - SCOPUS:84921522613

SN - 0042-207X

VL - 114

SP - 78

EP - 81

JO - Vacuum

JF - Vacuum

ER -

Enhanced resistive switching behaviors of HfO₂:Cu film with annealing process

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Keywords

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