Enhanced Performance of Weak Magnetic Field Sensor Based on Laminated Cantilever: Theoretical Analysis and Experimental Verification

Zhao Keli, Pang Peng, Ma Binghe, Zhang Xingxu, Luo Jian, Ye Tao, Zhang Zhonggang, Pei Guangyao, Liu Yunzhe, Zhang Tao, Gao Wei, Deng Jinjun

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The present study introduces a weak magnetic field sensor that utilizes a laminated cantilever structure, consisting of a magnetostrictive layer, a piezoelectric layer, and a substrate layer. Consequently, the transformation from the magnetic signal to the electrical signal is accomplished through the consistent mechanical stress in both layers. A comprehensive theoretical model has been developed to evaluate the impact of key structural parameters on the magnetoelectric (ME) sensing performance, enabling the optimization of the device design. By incorporating vanadium (V) as a dopant element, a Zn-V-O film with a piezoelectric coefficient as high as 35 pm/V is fulfilled. Furthermore, the high piezomagnetic properties of Galfenol make it a suitable candidate as a magnetostrictive layer. Sensor prototypes were fabricated for experimental verification through the utilization of MEMS technology. The film was characterized using techniques, such as X-ray powder diffraction (XRD), transmission electron microscopy (TEM), and piezoelectric force microscopy (PFM). The ME testing experiments indicated that the magnetostrictive coefficient could achieve about 9.32 kV/cm at resonant frequencies for sensors with varying lengths and a 20- m -thick Si substrate. The proposed sensor exhibits promising potential for improving weak magnetic field detection performance.

Original languageEnglish
Pages (from-to)10350-10358
Number of pages9
JournalIEEE Sensors Journal
Volume23
Issue number10
DOIs
StatePublished - 15 May 2023

Keywords

  • Doped zinc oxide
  • high ME coefficient
  • magnetoelectric (ME) cantilever
  • MEMS
  • weak magnetic field sensor

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