Energy band and band-gap properties of deformed single-walled silicon nanotubes

Guang cun Shan, Wei Huang

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The fantastic physical properties of single-walled silicon nanotubes (SWSiNTs) under mechanical strain make them promising materials for fabricating nanoscale electronic devices or transducers. Here we investigate the energy band and band-gap properties of the SWSiNTs calculated from the tight-binding model approximation. The results show that the band-gap properties are very sensitive to the deformation degree and the helicity of the SWSiNTs. The results can be employed to guide the design of nanoelectronic devices based on silicon nanotubes.

Original languageEnglish
Pages (from-to)183-187
Number of pages5
JournalFrontiers of Physics in China
Volume5
Issue number2
DOIs
StatePublished - Jun 2010
Externally publishedYes

Keywords

  • Band gap
  • Deformed
  • Energy band
  • Silicon nanotubes

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