Electronic properties of aluminum/CdZnTe interfaces

Xuxu Bai; Wanqi Jie; Gangqiang Zha; Wenhua Zhang; Junfa Zhu; Tao Wang; Dong Qian; Ying Liu; Jinfeng Jia

doi:10.1063/1.4804365

Electronic properties of aluminum/CdZnTe interfaces

Xuxu Bai, Wanqi Jie, Gangqiang Zha, Wenhua Zhang, Junfa Zhu, Tao Wang, Dong Qian, Ying Liu, Jinfeng Jia

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Understanding complex correlations between the macroscopic device performance and the contact formation on the atomic level in CdZnTe radiation detectors remains an enormous challenge. In this work, an effort towards bridging that macro-nano knowledge gap is made by systematic study of the electronic structures in the interface of Al/CdZnTe(111)A and Al/CdZnTe(111)B with Al coverage from sub-monolayer to multilayers using photoemission spectroscopy. Remarkable difference of the electronic states was found in these two interfaces. A strong interaction between Al and CdZnTe(111)A was observed at room temperature and thick interface layers (>12 nm) formed. In contrast, an intermix layer with a thickness of about one atomic layer (∼0.3 nm) was formed at Al/CdZnTe(111)B interface.

Original language	English
Article number	211602
Journal	Applied Physics Letters
Volume	102
Issue number	21
DOIs	https://doi.org/10.1063/1.4804365
State	Published - 27 May 2013

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abstract = "Understanding complex correlations between the macroscopic device performance and the contact formation on the atomic level in CdZnTe radiation detectors remains an enormous challenge. In this work, an effort towards bridging that macro-nano knowledge gap is made by systematic study of the electronic structures in the interface of Al/CdZnTe(111)A and Al/CdZnTe(111)B with Al coverage from sub-monolayer to multilayers using photoemission spectroscopy. Remarkable difference of the electronic states was found in these two interfaces. A strong interaction between Al and CdZnTe(111)A was observed at room temperature and thick interface layers (>12 nm) formed. In contrast, an intermix layer with a thickness of about one atomic layer (∼0.3 nm) was formed at Al/CdZnTe(111)B interface.",

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T1 - Electronic properties of aluminum/CdZnTe interfaces

AU - Bai, Xuxu

AU - Jie, Wanqi

AU - Zha, Gangqiang

AU - Zhang, Wenhua

AU - Zhu, Junfa

AU - Wang, Tao

AU - Qian, Dong

AU - Liu, Ying

AU - Jia, Jinfeng

PY - 2013/5/27

Y1 - 2013/5/27

N2 - Understanding complex correlations between the macroscopic device performance and the contact formation on the atomic level in CdZnTe radiation detectors remains an enormous challenge. In this work, an effort towards bridging that macro-nano knowledge gap is made by systematic study of the electronic structures in the interface of Al/CdZnTe(111)A and Al/CdZnTe(111)B with Al coverage from sub-monolayer to multilayers using photoemission spectroscopy. Remarkable difference of the electronic states was found in these two interfaces. A strong interaction between Al and CdZnTe(111)A was observed at room temperature and thick interface layers (>12 nm) formed. In contrast, an intermix layer with a thickness of about one atomic layer (∼0.3 nm) was formed at Al/CdZnTe(111)B interface.

AB - Understanding complex correlations between the macroscopic device performance and the contact formation on the atomic level in CdZnTe radiation detectors remains an enormous challenge. In this work, an effort towards bridging that macro-nano knowledge gap is made by systematic study of the electronic structures in the interface of Al/CdZnTe(111)A and Al/CdZnTe(111)B with Al coverage from sub-monolayer to multilayers using photoemission spectroscopy. Remarkable difference of the electronic states was found in these two interfaces. A strong interaction between Al and CdZnTe(111)A was observed at room temperature and thick interface layers (>12 nm) formed. In contrast, an intermix layer with a thickness of about one atomic layer (∼0.3 nm) was formed at Al/CdZnTe(111)B interface.

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Electronic properties of aluminum/CdZnTe interfaces

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