TY - JOUR
T1 - Efficiently synthesized n-type CoSb3 thermoelectric alloys under TGZM effect
AU - Li, Dou
AU - Li, Shuangming
AU - Li, Xuguang
AU - Yang, Bin
AU - Zhong, Hong
N1 - Publisher Copyright:
© 2020 Elsevier Ltd
PY - 2021/3/1
Y1 - 2021/3/1
N2 - Skutterudite compounds, the structure of “phonon glass electron crystal” (PGEC), possess excellent thermoelectric properties. Here, temperature gradient zone melting combined with hot pressing technique (TGZM-HP) was employed to synthesize n-type skutterudite CexNi1.5Co2.5Sb12 thermoelectric material. By doping element Ce, the carrier concentration of the alloy was optimized efficiently and the total thermal conductivity declined. For the TGZM-HP Ce0.6Ni1.5Co2.5Sb12 alloy, the power factor PF reaches to 1350 μW/(mK2), and the lattice thermal conductivity is dropped to 1.62 Wm−1K1 at 850 K, corresponding to an improved figure of merit ZT of 0.45. Importantly, compared with the traditional synthesis methods, this technique can precisely control the formation of thermometric phase and the preparation time is reduced remarkably.
AB - Skutterudite compounds, the structure of “phonon glass electron crystal” (PGEC), possess excellent thermoelectric properties. Here, temperature gradient zone melting combined with hot pressing technique (TGZM-HP) was employed to synthesize n-type skutterudite CexNi1.5Co2.5Sb12 thermoelectric material. By doping element Ce, the carrier concentration of the alloy was optimized efficiently and the total thermal conductivity declined. For the TGZM-HP Ce0.6Ni1.5Co2.5Sb12 alloy, the power factor PF reaches to 1350 μW/(mK2), and the lattice thermal conductivity is dropped to 1.62 Wm−1K1 at 850 K, corresponding to an improved figure of merit ZT of 0.45. Importantly, compared with the traditional synthesis methods, this technique can precisely control the formation of thermometric phase and the preparation time is reduced remarkably.
KW - Doped CoSb
KW - Mushy zone
KW - TGZM-HP
KW - Thermoelectric properties
UR - http://www.scopus.com/inward/record.url?scp=85094567160&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2020.105542
DO - 10.1016/j.mssp.2020.105542
M3 - 文章
AN - SCOPUS:85094567160
SN - 1369-8001
VL - 123
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
M1 - 105542
ER -