Abstract
In this paper, we report on the fabrication of a top-emitting electrophosphorescent p - i - n white organic light-emitting diode on the basis of a low-reflectivity Sm/Ag semi-transparent cathode together with a thickness-optimized ZnS out-coupling layer. With a 24-nm out-coupling layer, the reflectivity of the cathode is reduced to 8% at 492 nm and the mean reflectivity is 24% in the visible area. By introducing an efficient electron blocking layer tris(1-phenylpyrazolato,N,C2′)iridium(III) (Ir(ppz) 3) to confine the exciton recombination area, the current efficiency and the colour stability of the device are effectively improved. A white emission with the Ir(ppz) 3 layer exhibits a maximum current efficiency of 9.8 cd/A at 8 V, and the Commission Internationale de L'Eclairage (CIE) chromaticity coordinates are almost constant during a large voltage change of 6 V - 11 V. There is almost no viewing angular dependence in the spectrum when the viewing angle is no more than 45°, with a CIE x,y coordinate variation of only (±0.0025, ±0.0008). Even at a large viewing angle (75°), the CIE x,y coordinate change is as small as (±0.0087, ±0.0013).
Original language | English |
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Article number | 108507 |
Journal | Chinese Physics B |
Volume | 21 |
Issue number | 10 |
DOIs | |
State | Published - Oct 2012 |
Externally published | Yes |
Keywords
- colour stability
- electron blocking layer
- high efficiency
- top-emitting
- white organic light-emitting diode