TY - JOUR
T1 - Effects of sintering time on crystal structure, dielectric properties and conductivity of (Ca0.8Sr0.2)ZrO3 ceramics
AU - Chen, Weina
AU - Fan, Huiqing
AU - Long, Changbai
AU - Lei, Shenhui
PY - 2014/3
Y1 - 2014/3
N2 - (Ca0.8Sr0.2)ZrO3 ceramics were prepared using solid-state reaction process, which were sintered at 1,480 C for different sintering time (2, 4, 6, 8, 10, 12 h, respectively), their structures were characterized by X-ray diffraction (XRD), scanning electron microscopy, transmission electron microscopy and Raman spectroscopy. Rietveld refinement for the (Ca0.8Sr0.2)ZrO3 sintered for 10 h was carried out by powder XRD at room temperature and it crystallizes in orthorhombic space group Pnma [a = 5.77341(4) Å, b = 8.05569(6) Å, c = 5.63318(4) Å and V = 261.9920(30) Å3, Z = 4]. The (Ca0.8Sr0.2)ZrO3 ceramics sintered at 1,480 C for 2-12 h possessed a dielectric constant (ε r) of 23.6-27.9, a quality factor (Q × f) of 2,160-21,460 GHz and a temperature coefficient of resonant frequency (τ f ) from -14 to +13.6 ppm/ C. The Arrhenius plot of the dc electrical conductivity changed significantly with increasing sintering time.
AB - (Ca0.8Sr0.2)ZrO3 ceramics were prepared using solid-state reaction process, which were sintered at 1,480 C for different sintering time (2, 4, 6, 8, 10, 12 h, respectively), their structures were characterized by X-ray diffraction (XRD), scanning electron microscopy, transmission electron microscopy and Raman spectroscopy. Rietveld refinement for the (Ca0.8Sr0.2)ZrO3 sintered for 10 h was carried out by powder XRD at room temperature and it crystallizes in orthorhombic space group Pnma [a = 5.77341(4) Å, b = 8.05569(6) Å, c = 5.63318(4) Å and V = 261.9920(30) Å3, Z = 4]. The (Ca0.8Sr0.2)ZrO3 ceramics sintered at 1,480 C for 2-12 h possessed a dielectric constant (ε r) of 23.6-27.9, a quality factor (Q × f) of 2,160-21,460 GHz and a temperature coefficient of resonant frequency (τ f ) from -14 to +13.6 ppm/ C. The Arrhenius plot of the dc electrical conductivity changed significantly with increasing sintering time.
UR - http://www.scopus.com/inward/record.url?scp=84894656944&partnerID=8YFLogxK
U2 - 10.1007/s10854-014-1760-2
DO - 10.1007/s10854-014-1760-2
M3 - 文章
AN - SCOPUS:84894656944
SN - 0957-4522
VL - 25
SP - 1505
EP - 1511
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 3
ER -