Effects of indium doping on the properties of Cd 1-xMn xTe crystals

Lijun Luan, Wanqi Jie, Tao Wang, Yuanyuan Du

Research output: Contribution to journalArticlepeer-review

Abstract

The near-infrared (NIR) and infrared (IR) transmissions of Indium (In) doped Cd 1-xMn xTe (CMT) crystals were measured, and both the results show that the transmittances decline dramatically after doping. The reason is that the lattice absorption and free carriers absorption together determine the IR absorption of the crystals. The photoluminescence (PL) spectra measurements show that the donor-acceptor pair (D, A) peak is increased after doping, but the acceptor-bound exciton (A 0, X) peak is reduced. With increasing of In concentrations the (A 0, X) peak disappears and the (D, A) peak stands out completely. This series of changes result from that the substitutional In atoms act as donors and compensate the point defects V Cd. The Raman scattering (RS) measurements exhibit that In doping makes the RS spectra of the longitudinal-optic (LO 1) phonon peak a slight reduction, where LO 1 is relative to the phonon peak of "CdTe-like". Magnetization measurements show that the effects of In-doping on the magnetization of CMT are insignificant.

Original languageEnglish
Pages (from-to)383-386
Number of pages4
JournalXiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering
Volume41
Issue number3
StatePublished - Mar 2012

Keywords

  • Absorption edge
  • Indium doping
  • IR transmittance
  • Magnetization
  • Photoluminescence spectrum
  • Raman scattering spectrum

Fingerprint

Dive into the research topics of 'Effects of indium doping on the properties of Cd 1-xMn xTe crystals'. Together they form a unique fingerprint.

Cite this