Effects of electrodes on the filament formation in HfO2-based resistive random access memory

Tingting Tan; Tingting Guo; Xiaojing Li; Xi Chen; Liping Feng; Zhengtang Liu

Effects of electrodes on the filament formation in HfO₂-based resistive random access memory

Tingting Tan, Tingting Guo, Xiaojing Li, Xi Chen, Liping Feng, Zhengtang Liu

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The resistance switching characteristics of HfO₂-based resistive random access memory (RRAM) with Cu/HfO₂/ITO and TiN/HfO₂/ITO structures were investigated. Results show that both devices exhibit a stable and reproducible bipolar switching behavior during successive cycles. The formation of Cu conducting filaments is believed to be the reason for the resistive switching of Cu/HfO₂/ITO device. For TiN top electrode, the interfacial layer between TiN and HfO₂ film is formed and acts as an oxygen reservoir therefore, oxygen vacancy filaments are responsible for the resistive switching of TiN/HfO₂/ITO device.

Original language	English
Pages (from-to)	2642-2645
Number of pages	4
Journal	Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering
Volume	44
Issue number	11
State	Published - 1 Nov 2015

Keywords

HfO thin film
Metal filament
Oxygen vacancy
Resistive switching mechanism

Cite this

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title = "Effects of electrodes on the filament formation in HfO2-based resistive random access memory",

abstract = "The resistance switching characteristics of HfO2-based resistive random access memory (RRAM) with Cu/HfO2/ITO and TiN/HfO2/ITO structures were investigated. Results show that both devices exhibit a stable and reproducible bipolar switching behavior during successive cycles. The formation of Cu conducting filaments is believed to be the reason for the resistive switching of Cu/HfO2/ITO device. For TiN top electrode, the interfacial layer between TiN and HfO2 film is formed and acts as an oxygen reservoir therefore, oxygen vacancy filaments are responsible for the resistive switching of TiN/HfO2/ITO device.",

keywords = "HfO thin film, Metal filament, Oxygen vacancy, Resistive switching mechanism",

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TY - JOUR

T1 - Effects of electrodes on the filament formation in HfO2-based resistive random access memory

AU - Tan, Tingting

AU - Guo, Tingting

AU - Li, Xiaojing

AU - Chen, Xi

AU - Feng, Liping

AU - Liu, Zhengtang

PY - 2015/11/1

Y1 - 2015/11/1

N2 - The resistance switching characteristics of HfO2-based resistive random access memory (RRAM) with Cu/HfO2/ITO and TiN/HfO2/ITO structures were investigated. Results show that both devices exhibit a stable and reproducible bipolar switching behavior during successive cycles. The formation of Cu conducting filaments is believed to be the reason for the resistive switching of Cu/HfO2/ITO device. For TiN top electrode, the interfacial layer between TiN and HfO2 film is formed and acts as an oxygen reservoir therefore, oxygen vacancy filaments are responsible for the resistive switching of TiN/HfO2/ITO device.

AB - The resistance switching characteristics of HfO2-based resistive random access memory (RRAM) with Cu/HfO2/ITO and TiN/HfO2/ITO structures were investigated. Results show that both devices exhibit a stable and reproducible bipolar switching behavior during successive cycles. The formation of Cu conducting filaments is believed to be the reason for the resistive switching of Cu/HfO2/ITO device. For TiN top electrode, the interfacial layer between TiN and HfO2 film is formed and acts as an oxygen reservoir therefore, oxygen vacancy filaments are responsible for the resistive switching of TiN/HfO2/ITO device.

KW - HfO thin film

KW - Metal filament

KW - Oxygen vacancy

KW - Resistive switching mechanism

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SN - 1002-185X

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JO - Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering

JF - Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering

IS - 11

ER -

Effects of electrodes on the filament formation in HfO₂-based resistive random access memory

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