Effects of Doping on the Morphology and Infrared Radiative Properties of Black Silicon

Sreyash Sarkar; Tarik Bourouina; Elyes Nefzaoui; Ahmed A. Elsayed; Frederic Marty; Jeremie Drevillon; Yasser M. Sabry; Jiancun Zhao; Yiting Yu; Elodie Richalot; Philippe Basset

doi:10.1109/THERMINIC.2019.8923602

Effects of Doping on the Morphology and Infrared Radiative Properties of Black Silicon

Sreyash Sarkar, Tarik Bourouina, Elyes Nefzaoui, Ahmed A. Elsayed, Frederic Marty, Jeremie Drevillon, Yasser M. Sabry, Jiancun Zhao, Yiting Yu, Elodie Richalot, Philippe Basset

School of Mechanical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

For the first time, we show that the density of nanostructures on Black Silicon obtained by wafer-level cryogenic plasma processing increases with a high level of doping, extending the spectral range of its very high absorptivity from near-infrared to far-infrared. We have found experimentally and confirmed by simulations that, for highly doped Black Silicon, a high absorptivity is observed till 15 μm. Subsequent processing of SEM images reveals that these noteworthy radiative properties are probably due to particular morphological features of heavily doped Black Silicon at the nano-scale. These features are quantified through statistical image processing. Reported results pave the way to highly integrated and effective infrared sources using Black Silicon.

Original language	English
Title of host publication	THERMINIC 2019 - 2019 25th International Workshop Thermal Investigations of ICs and Systems
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728120782
DOIs	https://doi.org/10.1109/THERMINIC.2019.8923602
State	Published - Sep 2019
Event	25th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2019 - Lecco, Italy Duration: 25 Sep 2019 → 27 Sep 2019

Publication series

Name	THERMINIC 2019 - 2019 25th International Workshop Thermal Investigations of ICs and Systems

Conference

Conference	25th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2019
Country/Territory	Italy
City	Lecco
Period	25/09/19 → 27/09/19

Access to Document

10.1109/THERMINIC.2019.8923602

Cite this

Sarkar, S., Bourouina, T., Nefzaoui, E., Elsayed, A. A., Marty, F., Drevillon, J., Sabry, Y. M., Zhao, J., Yu, Y., Richalot, E., & Basset, P. (2019). Effects of Doping on the Morphology and Infrared Radiative Properties of Black Silicon. In THERMINIC 2019 - 2019 25th International Workshop Thermal Investigations of ICs and Systems Article 8923602 (THERMINIC 2019 - 2019 25th International Workshop Thermal Investigations of ICs and Systems). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/THERMINIC.2019.8923602

Sarkar, Sreyash ; Bourouina, Tarik ; Nefzaoui, Elyes et al. / Effects of Doping on the Morphology and Infrared Radiative Properties of Black Silicon. THERMINIC 2019 - 2019 25th International Workshop Thermal Investigations of ICs and Systems. Institute of Electrical and Electronics Engineers Inc., 2019. (THERMINIC 2019 - 2019 25th International Workshop Thermal Investigations of ICs and Systems).

@inproceedings{67dd77ca54d947008f8de3d495648480,

title = "Effects of Doping on the Morphology and Infrared Radiative Properties of Black Silicon",

abstract = "For the first time, we show that the density of nanostructures on Black Silicon obtained by wafer-level cryogenic plasma processing increases with a high level of doping, extending the spectral range of its very high absorptivity from near-infrared to far-infrared. We have found experimentally and confirmed by simulations that, for highly doped Black Silicon, a high absorptivity is observed till 15 μm. Subsequent processing of SEM images reveals that these noteworthy radiative properties are probably due to particular morphological features of heavily doped Black Silicon at the nano-scale. These features are quantified through statistical image processing. Reported results pave the way to highly integrated and effective infrared sources using Black Silicon.",

author = "Sreyash Sarkar and Tarik Bourouina and Elyes Nefzaoui and Elsayed, {Ahmed A.} and Frederic Marty and Jeremie Drevillon and Sabry, {Yasser M.} and Jiancun Zhao and Yiting Yu and Elodie Richalot and Philippe Basset",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 25th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2019 ; Conference date: 25-09-2019 Through 27-09-2019",

year = "2019",

month = sep,

doi = "10.1109/THERMINIC.2019.8923602",

language = "英语",

series = "THERMINIC 2019 - 2019 25th International Workshop Thermal Investigations of ICs and Systems",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "THERMINIC 2019 - 2019 25th International Workshop Thermal Investigations of ICs and Systems",

}

Sarkar, S, Bourouina, T, Nefzaoui, E, Elsayed, AA, Marty, F, Drevillon, J, Sabry, YM, Zhao, J, Yu, Y, Richalot, E & Basset, P 2019, Effects of Doping on the Morphology and Infrared Radiative Properties of Black Silicon. in THERMINIC 2019 - 2019 25th International Workshop Thermal Investigations of ICs and Systems., 8923602, THERMINIC 2019 - 2019 25th International Workshop Thermal Investigations of ICs and Systems, Institute of Electrical and Electronics Engineers Inc., 25th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2019, Lecco, Italy, 25/09/19. https://doi.org/10.1109/THERMINIC.2019.8923602

Effects of Doping on the Morphology and Infrared Radiative Properties of Black Silicon. / Sarkar, Sreyash; Bourouina, Tarik; Nefzaoui, Elyes et al.
THERMINIC 2019 - 2019 25th International Workshop Thermal Investigations of ICs and Systems. Institute of Electrical and Electronics Engineers Inc., 2019. 8923602 (THERMINIC 2019 - 2019 25th International Workshop Thermal Investigations of ICs and Systems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effects of Doping on the Morphology and Infrared Radiative Properties of Black Silicon

AU - Sarkar, Sreyash

AU - Bourouina, Tarik

AU - Nefzaoui, Elyes

AU - Elsayed, Ahmed A.

AU - Marty, Frederic

AU - Drevillon, Jeremie

AU - Sabry, Yasser M.

AU - Zhao, Jiancun

AU - Yu, Yiting

AU - Richalot, Elodie

AU - Basset, Philippe

PY - 2019/9

Y1 - 2019/9

N2 - For the first time, we show that the density of nanostructures on Black Silicon obtained by wafer-level cryogenic plasma processing increases with a high level of doping, extending the spectral range of its very high absorptivity from near-infrared to far-infrared. We have found experimentally and confirmed by simulations that, for highly doped Black Silicon, a high absorptivity is observed till 15 μm. Subsequent processing of SEM images reveals that these noteworthy radiative properties are probably due to particular morphological features of heavily doped Black Silicon at the nano-scale. These features are quantified through statistical image processing. Reported results pave the way to highly integrated and effective infrared sources using Black Silicon.

AB - For the first time, we show that the density of nanostructures on Black Silicon obtained by wafer-level cryogenic plasma processing increases with a high level of doping, extending the spectral range of its very high absorptivity from near-infrared to far-infrared. We have found experimentally and confirmed by simulations that, for highly doped Black Silicon, a high absorptivity is observed till 15 μm. Subsequent processing of SEM images reveals that these noteworthy radiative properties are probably due to particular morphological features of heavily doped Black Silicon at the nano-scale. These features are quantified through statistical image processing. Reported results pave the way to highly integrated and effective infrared sources using Black Silicon.

UR - http://www.scopus.com/inward/record.url?scp=85077993103&partnerID=8YFLogxK

U2 - 10.1109/THERMINIC.2019.8923602

DO - 10.1109/THERMINIC.2019.8923602

M3 - 会议稿件

AN - SCOPUS:85077993103

T3 - THERMINIC 2019 - 2019 25th International Workshop Thermal Investigations of ICs and Systems

BT - THERMINIC 2019 - 2019 25th International Workshop Thermal Investigations of ICs and Systems

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 25th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2019

Y2 - 25 September 2019 through 27 September 2019

ER -

Sarkar S, Bourouina T, Nefzaoui E, Elsayed AA, Marty F, Drevillon J et al. Effects of Doping on the Morphology and Infrared Radiative Properties of Black Silicon. In THERMINIC 2019 - 2019 25th International Workshop Thermal Investigations of ICs and Systems. Institute of Electrical and Electronics Engineers Inc. 2019. 8923602. (THERMINIC 2019 - 2019 25th International Workshop Thermal Investigations of ICs and Systems). doi: 10.1109/THERMINIC.2019.8923602

Effects of Doping on the Morphology and Infrared Radiative Properties of Black Silicon

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this