Abstract
The sulphur concentration effects on the structural and electronic properties of S-doped CuAlO2 have been investigated using the first-principles density functional theory. The calculated results show that the structural parameters increase with the doping concentration due to the S dopant. The obtained formation energies indicate that all S-doped CuAlO2 with different concentrations are structural stability, but the stability decreases with the S doping concentration. Electronic structure calculations present that the band gap decreases with the increasing concentration due to the better hybridization between Cu-3d and S-3p states and the downward shift of Cu-3p states in conduction bands. The covalence of S-doped CuAlO2 is enhanced and the localization is weakened, which are good for p-type conductivity.
Original language | English |
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Pages (from-to) | 152-155 |
Number of pages | 4 |
Journal | Computational Materials Science |
Volume | 101 |
DOIs | |
State | Published - 15 Apr 2015 |
Keywords
- Defects
- Electronic materials
- Electronic structure
- First-principles