TY - JOUR
T1 - Effects of deep-level defects on carrier mobility in CdZnTe crystals
AU - Xu, Lingyan
AU - Jie, Wanqi
AU - Fu, Xu
AU - Zha, Gangqiang
AU - Feng, Tao
AU - Guo, Rongrong
AU - Wang, Tao
AU - Xu, Yadong
AU - Zaman, Yasir
N1 - Publisher Copyright:
© 2014 Elsevier B.V.
PY - 2014/12/11
Y1 - 2014/12/11
N2 - The effects of deep-level defects on the carrier mobility of Cd0.9Zn0.1Te:In single crystals were studied. The total density of donor and acceptor defects in two samples, CZT1 and CZT2, was measured by the thermally stimulated current (TSC) to be ~2.0×1016 cm-3 and ~3.8×1017 cm-3, respectively. The mobility of electrons was measured by time-of-flight (TOF) technique to be 848±42 cm2/Vs in CZT1 and 337±17 cm2/Vs in CZT2. Theoretical estimation of the mobility was made considering the contributions from a variety of scattering mechanisms, including polar-optical phonon scattering, piezoelectric potential scattering, deformation potential scattering and ionized impurity scattering. The total electron mobility was estimated based on Matthiesens rule to be 1004 cm2/Vs in CZT1 and 352 cm2/Vs in CZT2, according to the defect density. Polar-optical phonon scattering was found to be the dominant scattering mechanism limiting the mobility at room temperature when the total defect density is lower than 1.0×1015 cm-3, and ionized impurity scattering will be the dominant when the total defect density higher than 1.0×1017 cm-3.
AB - The effects of deep-level defects on the carrier mobility of Cd0.9Zn0.1Te:In single crystals were studied. The total density of donor and acceptor defects in two samples, CZT1 and CZT2, was measured by the thermally stimulated current (TSC) to be ~2.0×1016 cm-3 and ~3.8×1017 cm-3, respectively. The mobility of electrons was measured by time-of-flight (TOF) technique to be 848±42 cm2/Vs in CZT1 and 337±17 cm2/Vs in CZT2. Theoretical estimation of the mobility was made considering the contributions from a variety of scattering mechanisms, including polar-optical phonon scattering, piezoelectric potential scattering, deformation potential scattering and ionized impurity scattering. The total electron mobility was estimated based on Matthiesens rule to be 1004 cm2/Vs in CZT1 and 352 cm2/Vs in CZT2, according to the defect density. Polar-optical phonon scattering was found to be the dominant scattering mechanism limiting the mobility at room temperature when the total defect density is lower than 1.0×1015 cm-3, and ionized impurity scattering will be the dominant when the total defect density higher than 1.0×1017 cm-3.
KW - Carrier mobility
KW - CdZnTe
KW - Deep-level defects
KW - Scattering mechanism
UR - http://www.scopus.com/inward/record.url?scp=84907549313&partnerID=8YFLogxK
U2 - 10.1016/j.nima.2014.08.040
DO - 10.1016/j.nima.2014.08.040
M3 - 文章
AN - SCOPUS:84907549313
SN - 0168-9002
VL - 767
SP - 318
EP - 321
JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
ER -