Effective carrier transport tuning of CuOx quantum dots hole interfacial layer for high-performance inverted perovskite solar cell

Yuhui Ma, Yewei Zhang, Heyi Zhang, Hao Lv, Ruiyuan Hu, Wei Liu, Songle Wang, Mao Jiang, Liang Chu, Jian Zhang, Xing'ao Li, Ruidong Xia, Wei Huang

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

Interfacial layer is deemed as an efficient approach to align the energy level and reduce the carrier recombination at the interfaces. Therefore, for the first time, a facile yet effective method to enhance carrier transport by copper oxide quantum dots (CuOx QDs) interfacial layer in inverted perovskite solar cells (PSCs) is developed. The high mobility of CuOx QDs interfacial layer could boost the performance of PSCs by providing a better electrical carrier transport. Furthermore, the higher crystallinity of perovskite layer on CuOx QDs layer reduced the charge trap state densities, which leads to an increase in carrier recombination resistance. As a result, our inverted PSCs exhibit a power conversion efficiency (PCE) of 19.91%, a 14.6% increment compared with the PCE of a control device. Our finding demonstrates the promise of enhancing carrier transport by interfacial layer for high-performance PSCs and expands choice of interfacial layer materials in PSCs.

Original languageEnglish
Article number149117
JournalApplied Surface Science
Volume547
DOIs
StatePublished - 1 May 2021

Keywords

  • Band alignment
  • Carrier transport
  • Copper oxide quantum dot
  • Inorganic interfacial layer
  • MAPbI

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