Effect of wet etching parameter on the diameter and length of silicon nanowires

Yang He, Chengyu Jiang, Hengxu Yin, Chen Jun, Weizheng Yuan

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A wet etching method for preparing silicon nanowires on silicon substrates at near room temperature is presented. The effect of experiment parameter on the silver nanoparticle forming including concentration of AgNO3, immersing time and solution temperature, and the effect of etching time on the length of silicon nanowires are investigated. It is concluded that solution temperature has more impact to diameter of silicon nanowires than concentration of AgNO3 and immersing time and longer etching time may result in longer silicon nanowires.

Original languageEnglish
Title of host publicationMEMS/NEMS Nano Technology
PublisherTrans Tech Publications Ltd
Pages584-588
Number of pages5
ISBN (Print)9783037851753
DOIs
StatePublished - 2011

Publication series

NameKey Engineering Materials
Volume483
ISSN (Print)1013-9826
ISSN (Electronic)1662-9795

Keywords

  • Diameter
  • Length
  • Silicon nanowire
  • Wet etching

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