Effect of vacancy defects on electronic and magnetic properties of zigzag silicon nanoribbons

Yanni Yang; Junjie Wang

doi:10.1109/IAECST54258.2021.9695730

Effect of vacancy defects on electronic and magnetic properties of zigzag silicon nanoribbons

Yanni Yang, Junjie Wang

Xi'an Medical University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

we investigate the electronic and magnetic characteristics of the zigzag silicon nanoribbons (ZSiNRs) having a monovacancy or a divacancy by the first-principles calculations based on density-functional theory. No matter a monovacancy or a divacancy, a direct semiconductor ZSiNRs turn to a metallic character, but when the vacancy is at different position, there is a different magnetic properties. The ZSiNRs become metallic no matter a monovacancy or divacancy after relaxation, when the vacancy is at the center, they have antiferromagnetic property, while they have ferromagnetic property in non-center.

Original language	English
Title of host publication	2021 3rd International Academic Exchange Conference on Science and Technology Innovation, IAECST 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	998-1002
Number of pages	5
ISBN (Electronic)	9781665402675
DOIs	https://doi.org/10.1109/IAECST54258.2021.9695730
State	Published - 2021
Externally published	Yes
Event	3rd International Academic Exchange Conference on Science and Technology Innovation, IAECST 2021 - Guangzhou, China Duration: 10 Dec 2021 → 12 Dec 2021

Publication series

Name	2021 3rd International Academic Exchange Conference on Science and Technology Innovation, IAECST 2021

Conference

Conference	3rd International Academic Exchange Conference on Science and Technology Innovation, IAECST 2021
Country/Territory	China
City	Guangzhou
Period	10/12/21 → 12/12/21

Keywords

Electronic and magnetic properties
Frist-principles
Silicon nanoribbons
Vacancy

Access to Document

10.1109/IAECST54258.2021.9695730

Cite this

Yang, Y., & Wang, J. (2021). Effect of vacancy defects on electronic and magnetic properties of zigzag silicon nanoribbons. In 2021 3rd International Academic Exchange Conference on Science and Technology Innovation, IAECST 2021 (pp. 998-1002). (2021 3rd International Academic Exchange Conference on Science and Technology Innovation, IAECST 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IAECST54258.2021.9695730

Yang, Yanni ; Wang, Junjie. / Effect of vacancy defects on electronic and magnetic properties of zigzag silicon nanoribbons. 2021 3rd International Academic Exchange Conference on Science and Technology Innovation, IAECST 2021. Institute of Electrical and Electronics Engineers Inc., 2021. pp. 998-1002 (2021 3rd International Academic Exchange Conference on Science and Technology Innovation, IAECST 2021).

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title = "Effect of vacancy defects on electronic and magnetic properties of zigzag silicon nanoribbons",

abstract = "we investigate the electronic and magnetic characteristics of the zigzag silicon nanoribbons (ZSiNRs) having a monovacancy or a divacancy by the first-principles calculations based on density-functional theory. No matter a monovacancy or a divacancy, a direct semiconductor ZSiNRs turn to a metallic character, but when the vacancy is at different position, there is a different magnetic properties. The ZSiNRs become metallic no matter a monovacancy or divacancy after relaxation, when the vacancy is at the center, they have antiferromagnetic property, while they have ferromagnetic property in non-center.",

keywords = "Electronic and magnetic properties, Frist-principles, Silicon nanoribbons, Vacancy",

author = "Yanni Yang and Junjie Wang",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 3rd International Academic Exchange Conference on Science and Technology Innovation, IAECST 2021 ; Conference date: 10-12-2021 Through 12-12-2021",

year = "2021",

doi = "10.1109/IAECST54258.2021.9695730",

language = "英语",

series = "2021 3rd International Academic Exchange Conference on Science and Technology Innovation, IAECST 2021",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "998--1002",

booktitle = "2021 3rd International Academic Exchange Conference on Science and Technology Innovation, IAECST 2021",

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Yang, Y & Wang, J 2021, Effect of vacancy defects on electronic and magnetic properties of zigzag silicon nanoribbons. in 2021 3rd International Academic Exchange Conference on Science and Technology Innovation, IAECST 2021. 2021 3rd International Academic Exchange Conference on Science and Technology Innovation, IAECST 2021, Institute of Electrical and Electronics Engineers Inc., pp. 998-1002, 3rd International Academic Exchange Conference on Science and Technology Innovation, IAECST 2021, Guangzhou, China, 10/12/21. https://doi.org/10.1109/IAECST54258.2021.9695730

Effect of vacancy defects on electronic and magnetic properties of zigzag silicon nanoribbons. / Yang, Yanni; Wang, Junjie.
2021 3rd International Academic Exchange Conference on Science and Technology Innovation, IAECST 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 998-1002 (2021 3rd International Academic Exchange Conference on Science and Technology Innovation, IAECST 2021).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Wang, Junjie

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N2 - we investigate the electronic and magnetic characteristics of the zigzag silicon nanoribbons (ZSiNRs) having a monovacancy or a divacancy by the first-principles calculations based on density-functional theory. No matter a monovacancy or a divacancy, a direct semiconductor ZSiNRs turn to a metallic character, but when the vacancy is at different position, there is a different magnetic properties. The ZSiNRs become metallic no matter a monovacancy or divacancy after relaxation, when the vacancy is at the center, they have antiferromagnetic property, while they have ferromagnetic property in non-center.

AB - we investigate the electronic and magnetic characteristics of the zigzag silicon nanoribbons (ZSiNRs) having a monovacancy or a divacancy by the first-principles calculations based on density-functional theory. No matter a monovacancy or a divacancy, a direct semiconductor ZSiNRs turn to a metallic character, but when the vacancy is at different position, there is a different magnetic properties. The ZSiNRs become metallic no matter a monovacancy or divacancy after relaxation, when the vacancy is at the center, they have antiferromagnetic property, while they have ferromagnetic property in non-center.

KW - Electronic and magnetic properties

KW - Frist-principles

KW - Silicon nanoribbons

KW - Vacancy

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DO - 10.1109/IAECST54258.2021.9695730

M3 - 会议稿件

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T3 - 2021 3rd International Academic Exchange Conference on Science and Technology Innovation, IAECST 2021

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BT - 2021 3rd International Academic Exchange Conference on Science and Technology Innovation, IAECST 2021

PB - Institute of Electrical and Electronics Engineers Inc.

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Yang Y, Wang J. Effect of vacancy defects on electronic and magnetic properties of zigzag silicon nanoribbons. In 2021 3rd International Academic Exchange Conference on Science and Technology Innovation, IAECST 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 998-1002. (2021 3rd International Academic Exchange Conference on Science and Technology Innovation, IAECST 2021). doi: 10.1109/IAECST54258.2021.9695730

Effect of vacancy defects on electronic and magnetic properties of zigzag silicon nanoribbons

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