Effect of temperature on the microstructure of boron nitride formed in situ on chemical vapor-deposited boron in ammonia gas

Siwei Li; Litong Zhang; Fang Ye; Yongsheng Liu; Laifei Cheng; Zude Feng; Lifu Chen

doi:10.1111/j.1551-2916.2010.04386.x

Effect of temperature on the microstructure of boron nitride formed in situ on chemical vapor-deposited boron in ammonia gas

Siwei Li, Litong Zhang, Fang Ye, Yongsheng Liu, Laifei Cheng, Zude Feng, Lifu Chen

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Boron nitride thin layers are in situ fabricated on chemical vapor-deposited boron in ammonia gas. Characterization by X-ray photoelectron spectroscopy and transmission electron microscopy reveals that the nitridation is dominated by different processes with varying temperatures. Below 1300°C the surface reaction is in control and leads to the formation of uniformly thin layer with mostly sp³ boron nitride. As the temperature rises, the nitridation is gradually turned as a diffusion-determining process, after which a thicker but uneven layer with hexagonal sp² boron nitride is produced.

Original language	English
Pages (from-to)	679-682
Number of pages	4
Journal	Journal of the American Ceramic Society
Volume	94
Issue number	3
DOIs	https://doi.org/10.1111/j.1551-2916.2010.04386.x
State	Published - Mar 2011

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10.1111/j.1551-2916.2010.04386.x

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abstract = "Boron nitride thin layers are in situ fabricated on chemical vapor-deposited boron in ammonia gas. Characterization by X-ray photoelectron spectroscopy and transmission electron microscopy reveals that the nitridation is dominated by different processes with varying temperatures. Below 1300°C the surface reaction is in control and leads to the formation of uniformly thin layer with mostly sp3 boron nitride. As the temperature rises, the nitridation is gradually turned as a diffusion-determining process, after which a thicker but uneven layer with hexagonal sp2 boron nitride is produced.",

author = "Siwei Li and Litong Zhang and Fang Ye and Yongsheng Liu and Laifei Cheng and Zude Feng and Lifu Chen",

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AU - Li, Siwei

AU - Zhang, Litong

AU - Ye, Fang

AU - Liu, Yongsheng

AU - Cheng, Laifei

AU - Feng, Zude

AU - Chen, Lifu

PY - 2011/3

Y1 - 2011/3

N2 - Boron nitride thin layers are in situ fabricated on chemical vapor-deposited boron in ammonia gas. Characterization by X-ray photoelectron spectroscopy and transmission electron microscopy reveals that the nitridation is dominated by different processes with varying temperatures. Below 1300°C the surface reaction is in control and leads to the formation of uniformly thin layer with mostly sp3 boron nitride. As the temperature rises, the nitridation is gradually turned as a diffusion-determining process, after which a thicker but uneven layer with hexagonal sp2 boron nitride is produced.

AB - Boron nitride thin layers are in situ fabricated on chemical vapor-deposited boron in ammonia gas. Characterization by X-ray photoelectron spectroscopy and transmission electron microscopy reveals that the nitridation is dominated by different processes with varying temperatures. Below 1300°C the surface reaction is in control and leads to the formation of uniformly thin layer with mostly sp3 boron nitride. As the temperature rises, the nitridation is gradually turned as a diffusion-determining process, after which a thicker but uneven layer with hexagonal sp2 boron nitride is produced.

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JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

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ER -

Effect of temperature on the microstructure of boron nitride formed in situ on chemical vapor-deposited boron in ammonia gas

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