TY - JOUR
T1 - Effect of synthesized temperature on microstructure, infrared emissivity and dielectric property of Fe-doped ZnO powder
AU - Su, Xiaolei
AU - Liu, Xiaoqin
AU - Jia, Yan
AU - Wang, Junbo
AU - Xu, Jie
AU - He, Xinhai
AU - Fu, Chong
AU - Liu, Songtao
AU - Zheng, Jing
PY - 2013/12
Y1 - 2013/12
N2 - Fe-doped ZnO powder has been synthesized by coprecipitation method under different synthesized temperature, using zinc nitrate as the staring material, urea as the precipitator, and ferric nitrate as the doping source, respectively. The prepared powders have been characterized by XRD and SEM. Results show that when the synthesized temperature is below 700 C the prepared powders are ZnO(Fe) solid solution powders and the ZnFe2O4 impurity phase appeared for the Fe-doped ZnO powder synthesized at 700 C. The electric permittivities in the frequency range of 8.2-12.4 GHz and average infrared emissivity at the waveband range of 8-14 μm of prepared powders have been determined. The real part and imaginary part of electric permittivities of prepared powders have increased firstly and then decreased with increasing synthesized temperature. The average infrared emissivity has presented the opposite changing trend.
AB - Fe-doped ZnO powder has been synthesized by coprecipitation method under different synthesized temperature, using zinc nitrate as the staring material, urea as the precipitator, and ferric nitrate as the doping source, respectively. The prepared powders have been characterized by XRD and SEM. Results show that when the synthesized temperature is below 700 C the prepared powders are ZnO(Fe) solid solution powders and the ZnFe2O4 impurity phase appeared for the Fe-doped ZnO powder synthesized at 700 C. The electric permittivities in the frequency range of 8.2-12.4 GHz and average infrared emissivity at the waveband range of 8-14 μm of prepared powders have been determined. The real part and imaginary part of electric permittivities of prepared powders have increased firstly and then decreased with increasing synthesized temperature. The average infrared emissivity has presented the opposite changing trend.
UR - http://www.scopus.com/inward/record.url?scp=84890387836&partnerID=8YFLogxK
U2 - 10.1007/s10854-013-1511-9
DO - 10.1007/s10854-013-1511-9
M3 - 文章
AN - SCOPUS:84890387836
SN - 0957-4522
VL - 24
SP - 4974
EP - 4979
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 12
ER -