TY - GEN
T1 - Effect of substrates on the characteristics of silicon carbide deposited from methyltrichlorosilane
AU - Lu, Cuiying
AU - Yin, Xiaowei
AU - Li, Xiangming
PY - 2011
Y1 - 2011
N2 - SiC is fabricated by chemical vapor deposition (CVD) on graphite and Si3N4 ceramic respectively. The morphology, composition, grain size and electrical conductivity of SiC deposited on graphite (CVD-SiC(C)) and on Si3N4 ceramic (CVD-SiC (N)) are investigated and compared. The morphology of CVD-SiC (C) and CVD-SiC(N) is much different with each other. The grain size of CVD-SiC(C) is bigger than that of CVD-SiC (N). It is nearly stoichiometric in CVD-SiC(C), while carbon-rich in CVD-SiC(N), so the electrical conductivity and dielectric loss of CVD-SiC(N) are much higher than that of CVD-SiC(C). As the annealing temperature increases, the grain size and electrical conductivity of CVD-SiC(C) and CVD-SiC(N) both increase.
AB - SiC is fabricated by chemical vapor deposition (CVD) on graphite and Si3N4 ceramic respectively. The morphology, composition, grain size and electrical conductivity of SiC deposited on graphite (CVD-SiC(C)) and on Si3N4 ceramic (CVD-SiC (N)) are investigated and compared. The morphology of CVD-SiC (C) and CVD-SiC(N) is much different with each other. The grain size of CVD-SiC(C) is bigger than that of CVD-SiC (N). It is nearly stoichiometric in CVD-SiC(C), while carbon-rich in CVD-SiC(N), so the electrical conductivity and dielectric loss of CVD-SiC(N) are much higher than that of CVD-SiC(C). As the annealing temperature increases, the grain size and electrical conductivity of CVD-SiC(C) and CVD-SiC(N) both increase.
KW - Chemical vapor deposition
KW - Electrical conductivity
KW - Grain size
KW - Silicon carbide
UR - http://www.scopus.com/inward/record.url?scp=79960830378&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/AMR.295-297.1422
DO - 10.4028/www.scientific.net/AMR.295-297.1422
M3 - 会议稿件
AN - SCOPUS:79960830378
SN - 9783037851944
T3 - Advanced Materials Research
SP - 1422
EP - 1427
BT - Manufacturing Science and Technology
T2 - 2011 International Conference on Advanced Engineering Materials and Technology, AEMT 2011
Y2 - 29 July 2011 through 31 July 2011
ER -