Effect of oxidation behavior on visible–infrared property of TiN films

Linlin Lu; Jie Xu; Yi Liu; Jie Dong; Xiaolei Su; Fa Luo

doi:10.1007/s10854-021-07527-5

Effect of oxidation behavior on visible–infrared property of TiN films

Linlin Lu, Jie Xu, Yi Liu, Jie Dong, Xiaolei Su, Fa Luo

School of Materials Sience and Engineering

Xi'an Polytechnic University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

TiN films were oxidized at different temperatures (300, 400, 500, and 600 °C) for different times (1, 10, 50, and100 h), and the effect of oxidation behavior on optical performance and infrared emissivity of TiN films was investigated. The results showed that TiN films were oxidized to the solid solution of TiON with the same crystal structure as TiN at 400 °C for 1 h. The films exhibited low reflectance and transmittance and the infrared emissivity changed little. With the extension of oxidation time, TiON gradually transformed into Ti₂O₃ and TiO₂ and the infrared emissivity of the films went up. As the oxidation temperature rose above 500 °C, TiN films were oxidized quickly and the infrared emissivity increased to 0.8.

Original language	English
Pages (from-to)	3267-3274
Number of pages	8
Journal	Journal of Materials Science: Materials in Electronics
Volume	33
Issue number	6
DOIs	https://doi.org/10.1007/s10854-021-07527-5
State	Published - Feb 2022

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title = "Effect of oxidation behavior on visible–infrared property of TiN films",

abstract = "TiN films were oxidized at different temperatures (300, 400, 500, and 600 °C) for different times (1, 10, 50, and100 h), and the effect of oxidation behavior on optical performance and infrared emissivity of TiN films was investigated. The results showed that TiN films were oxidized to the solid solution of TiON with the same crystal structure as TiN at 400 °C for 1 h. The films exhibited low reflectance and transmittance and the infrared emissivity changed little. With the extension of oxidation time, TiON gradually transformed into Ti2O3 and TiO2 and the infrared emissivity of the films went up. As the oxidation temperature rose above 500 °C, TiN films were oxidized quickly and the infrared emissivity increased to 0.8.",

author = "Linlin Lu and Jie Xu and Yi Liu and Jie Dong and Xiaolei Su and Fa Luo",

note = "Publisher Copyright: {\textcopyright} 2022, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.",

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doi = "10.1007/s10854-021-07527-5",

language = "英语",

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TY - JOUR

T1 - Effect of oxidation behavior on visible–infrared property of TiN films

AU - Lu, Linlin

AU - Xu, Jie

AU - Liu, Yi

AU - Dong, Jie

AU - Su, Xiaolei

AU - Luo, Fa

PY - 2022/2

Y1 - 2022/2

N2 - TiN films were oxidized at different temperatures (300, 400, 500, and 600 °C) for different times (1, 10, 50, and100 h), and the effect of oxidation behavior on optical performance and infrared emissivity of TiN films was investigated. The results showed that TiN films were oxidized to the solid solution of TiON with the same crystal structure as TiN at 400 °C for 1 h. The films exhibited low reflectance and transmittance and the infrared emissivity changed little. With the extension of oxidation time, TiON gradually transformed into Ti2O3 and TiO2 and the infrared emissivity of the films went up. As the oxidation temperature rose above 500 °C, TiN films were oxidized quickly and the infrared emissivity increased to 0.8.

AB - TiN films were oxidized at different temperatures (300, 400, 500, and 600 °C) for different times (1, 10, 50, and100 h), and the effect of oxidation behavior on optical performance and infrared emissivity of TiN films was investigated. The results showed that TiN films were oxidized to the solid solution of TiON with the same crystal structure as TiN at 400 °C for 1 h. The films exhibited low reflectance and transmittance and the infrared emissivity changed little. With the extension of oxidation time, TiON gradually transformed into Ti2O3 and TiO2 and the infrared emissivity of the films went up. As the oxidation temperature rose above 500 °C, TiN films were oxidized quickly and the infrared emissivity increased to 0.8.

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DO - 10.1007/s10854-021-07527-5

M3 - 文章

AN - SCOPUS:85122313953

SN - 0957-4522

VL - 33

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JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 6

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Effect of oxidation behavior on visible–infrared property of TiN films

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