TY - JOUR
T1 - Effect of diamond content on microstructure and properties of C/SiC-diamond composites
AU - Li, Jingxin
AU - Liu, Yongsheng
AU - Chen, Chao
AU - Pan, Yu
AU - Wang, Jing
AU - Wang, Ning
N1 - Publisher Copyright:
© 2020 Elsevier B.V.
PY - 2020/8
Y1 - 2020/8
N2 - Phenolic resin slurry with different concentrations of diamond was introduced into porous carbon fiber-reinforced silicon carbide (C/SiC) composites, and corresponding C/SiC-diamond composites were obtained through the reactive melt infiltration process. The effects of diamond concentration on the microstructure, mechanical properties, and thermophysical characteristics of C/SiC-diamond composites were obtained through observation and analysis. The results indicated that with the increase of diamond concentration, more diamond particles were introduced into the composites; and the density, mechanical properties, and thermophysical properties of the composites were improved. The three-point bending strength of sample D10 (diamond concentration of 10 vol% in slurry) was 309.01 MPa, the coefficient of thermal expansion at 700 °C reached 2.69 × 10−6/K, and the thermal conductivity at room temperature reached 14.68 W/(m·K), which is much higher than twice that of C/SiC composites (5–6 W/(m·K)) prepared by chemical vapor infiltration.
AB - Phenolic resin slurry with different concentrations of diamond was introduced into porous carbon fiber-reinforced silicon carbide (C/SiC) composites, and corresponding C/SiC-diamond composites were obtained through the reactive melt infiltration process. The effects of diamond concentration on the microstructure, mechanical properties, and thermophysical characteristics of C/SiC-diamond composites were obtained through observation and analysis. The results indicated that with the increase of diamond concentration, more diamond particles were introduced into the composites; and the density, mechanical properties, and thermophysical properties of the composites were improved. The three-point bending strength of sample D10 (diamond concentration of 10 vol% in slurry) was 309.01 MPa, the coefficient of thermal expansion at 700 °C reached 2.69 × 10−6/K, and the thermal conductivity at room temperature reached 14.68 W/(m·K), which is much higher than twice that of C/SiC composites (5–6 W/(m·K)) prepared by chemical vapor infiltration.
KW - C/SiC-diamond composites
KW - Mechanical properties
KW - Microstructure
KW - Reactive melt infiltration
KW - Thermophysical properties
UR - http://www.scopus.com/inward/record.url?scp=85084180214&partnerID=8YFLogxK
U2 - 10.1016/j.diamond.2020.107902
DO - 10.1016/j.diamond.2020.107902
M3 - 文章
AN - SCOPUS:85084180214
SN - 0925-9635
VL - 107
JO - Diamond and Related Materials
JF - Diamond and Related Materials
M1 - 107902
ER -