Effect of Deposition Temperature on Dynamics and Mechanism of Deposition for Si-B-C Ceramic from BCl 3/SiCH 3Cl 3/H 2 Precursor

Xinzhang Zuo, Litong Zhang, Yongsheng Liu, Siwei Li, Laifei Cheng

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

The deposition rate, phase, chemical composition and microstructure of deposits were determined from 950 to 1100 °C. With increasing temperature, the deposition rate increases, and the morphology changes from smooth to coarse, meanwhile, the concentration of silicon increases while that of boron decreases. The deposition process is controlled by chemical reactions, and the activation energy is 271 kJ/mol. At relatively lower temperature (below 1000 °C), the deposition process is dominated by formation of B 4C. While at higher temperature (above 1000 °C), it is governed by formation of SiC. B 4C and SiC disperse uniformly in the Si-B-C co-deposition system and form a dense network structure.

Original languageEnglish
Pages (from-to)793-798
Number of pages6
JournalJournal of Materials Science and Technology
Volume28
Issue number9
DOIs
StatePublished - Sep 2012

Keywords

  • Chemical vapor deposition (CVD)
  • Deposition mechanism
  • Morphology
  • Si-B-C ceramic

Fingerprint

Dive into the research topics of 'Effect of Deposition Temperature on Dynamics and Mechanism of Deposition for Si-B-C Ceramic from BCl 3/SiCH 3Cl 3/H 2 Precursor'. Together they form a unique fingerprint.

Cite this