TY - JOUR
T1 - Effect of Deposition Temperature on Dynamics and Mechanism of Deposition for Si-B-C Ceramic from BCl 3/SiCH 3Cl 3/H 2 Precursor
AU - Zuo, Xinzhang
AU - Zhang, Litong
AU - Liu, Yongsheng
AU - Li, Siwei
AU - Cheng, Laifei
PY - 2012/9
Y1 - 2012/9
N2 - The deposition rate, phase, chemical composition and microstructure of deposits were determined from 950 to 1100 °C. With increasing temperature, the deposition rate increases, and the morphology changes from smooth to coarse, meanwhile, the concentration of silicon increases while that of boron decreases. The deposition process is controlled by chemical reactions, and the activation energy is 271 kJ/mol. At relatively lower temperature (below 1000 °C), the deposition process is dominated by formation of B 4C. While at higher temperature (above 1000 °C), it is governed by formation of SiC. B 4C and SiC disperse uniformly in the Si-B-C co-deposition system and form a dense network structure.
AB - The deposition rate, phase, chemical composition and microstructure of deposits were determined from 950 to 1100 °C. With increasing temperature, the deposition rate increases, and the morphology changes from smooth to coarse, meanwhile, the concentration of silicon increases while that of boron decreases. The deposition process is controlled by chemical reactions, and the activation energy is 271 kJ/mol. At relatively lower temperature (below 1000 °C), the deposition process is dominated by formation of B 4C. While at higher temperature (above 1000 °C), it is governed by formation of SiC. B 4C and SiC disperse uniformly in the Si-B-C co-deposition system and form a dense network structure.
KW - Chemical vapor deposition (CVD)
KW - Deposition mechanism
KW - Morphology
KW - Si-B-C ceramic
UR - http://www.scopus.com/inward/record.url?scp=84867203891&partnerID=8YFLogxK
U2 - 10.1016/S1005-0302(12)60132-7
DO - 10.1016/S1005-0302(12)60132-7
M3 - 文章
AN - SCOPUS:84867203891
SN - 1005-0302
VL - 28
SP - 793
EP - 798
JO - Journal of Materials Science and Technology
JF - Journal of Materials Science and Technology
IS - 9
ER -