Effect of annealing on the residual stress and strain distribution in CdZnTe wafers

Dongmei Zeng; Wanqi Jie; Gangqiang Zha; Tao Wang; Ge Yang

doi:10.1016/j.jcrysgro.2007.04.021

Effect of annealing on the residual stress and strain distribution in CdZnTe wafers

Dongmei Zeng, Wanqi Jie, Gangqiang Zha, Tao Wang, Ge Yang

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

The effect of annealing on residual stress and strain distribution in CdZnTe wafers was studied based using an X-ray diffraction (XRD) method. The results proved the effectiveness of annealing on the reduction of the residual stress and strain. By the means of transmission electron microscopy (TEM) and infrared (IR) transmission analyses, it was found that dislocation gliding, decreases in the size of the Te precipitates, dispersing of Te precipitates, composition homogenization, and point defects recombination contributed to a reduction of the residual stress and strain during annealing of the wafer. Additionally, the larger residual stress in CdZnTe wafers introduced bigger lattice misfits. Thus, for more the residual stress and strain in the CdZnTe wafer, the IR transmission will be lowered.

Original language	English
Pages (from-to)	50-54
Number of pages	5
Journal	Journal of Crystal Growth
Volume	305
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2007.04.021
State	Published - 1 Jul 2007

Keywords

A1. Annealed
A1. Lattice misfit
A1. Precipitate
A1. Residual stress and strain
A1. X-ray diffraction
B2. CdZnTe
B2. Semiconducting II-VI materials

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10.1016/j.jcrysgro.2007.04.021

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title = "Effect of annealing on the residual stress and strain distribution in CdZnTe wafers",

abstract = "The effect of annealing on residual stress and strain distribution in CdZnTe wafers was studied based using an X-ray diffraction (XRD) method. The results proved the effectiveness of annealing on the reduction of the residual stress and strain. By the means of transmission electron microscopy (TEM) and infrared (IR) transmission analyses, it was found that dislocation gliding, decreases in the size of the Te precipitates, dispersing of Te precipitates, composition homogenization, and point defects recombination contributed to a reduction of the residual stress and strain during annealing of the wafer. Additionally, the larger residual stress in CdZnTe wafers introduced bigger lattice misfits. Thus, for more the residual stress and strain in the CdZnTe wafer, the IR transmission will be lowered.",

keywords = "A1. Annealed, A1. Lattice misfit, A1. Precipitate, A1. Residual stress and strain, A1. X-ray diffraction, B2. CdZnTe, B2. Semiconducting II-VI materials",

author = "Dongmei Zeng and Wanqi Jie and Gangqiang Zha and Tao Wang and Ge Yang",

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doi = "10.1016/j.jcrysgro.2007.04.021",

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T1 - Effect of annealing on the residual stress and strain distribution in CdZnTe wafers

AU - Zeng, Dongmei

AU - Jie, Wanqi

AU - Zha, Gangqiang

AU - Wang, Tao

AU - Yang, Ge

PY - 2007/7/1

Y1 - 2007/7/1

N2 - The effect of annealing on residual stress and strain distribution in CdZnTe wafers was studied based using an X-ray diffraction (XRD) method. The results proved the effectiveness of annealing on the reduction of the residual stress and strain. By the means of transmission electron microscopy (TEM) and infrared (IR) transmission analyses, it was found that dislocation gliding, decreases in the size of the Te precipitates, dispersing of Te precipitates, composition homogenization, and point defects recombination contributed to a reduction of the residual stress and strain during annealing of the wafer. Additionally, the larger residual stress in CdZnTe wafers introduced bigger lattice misfits. Thus, for more the residual stress and strain in the CdZnTe wafer, the IR transmission will be lowered.

AB - The effect of annealing on residual stress and strain distribution in CdZnTe wafers was studied based using an X-ray diffraction (XRD) method. The results proved the effectiveness of annealing on the reduction of the residual stress and strain. By the means of transmission electron microscopy (TEM) and infrared (IR) transmission analyses, it was found that dislocation gliding, decreases in the size of the Te precipitates, dispersing of Te precipitates, composition homogenization, and point defects recombination contributed to a reduction of the residual stress and strain during annealing of the wafer. Additionally, the larger residual stress in CdZnTe wafers introduced bigger lattice misfits. Thus, for more the residual stress and strain in the CdZnTe wafer, the IR transmission will be lowered.

KW - A1. Annealed

KW - A1. Lattice misfit

KW - A1. Precipitate

KW - A1. Residual stress and strain

KW - A1. X-ray diffraction

KW - B2. CdZnTe

KW - B2. Semiconducting II-VI materials

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VL - 305

SP - 50

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JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

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ER -

Effect of annealing on the residual stress and strain distribution in CdZnTe wafers

Abstract

Keywords

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