TY - JOUR
T1 - Discovery of Deactivation Phenomenon in NiCo2S4/NiS2 Electromagnetic Wave Absorbent and Its Reactivation Mechanism
AU - Liang, Hongsheng
AU - Hui, Shengchong
AU - Chen, Geng
AU - Shen, Hao
AU - Yun, Jijun
AU - Zhang, Limin
AU - Lu, Wei
AU - Wu, Hongjing
N1 - Publisher Copyright:
© 2024 Wiley-VCH GmbH.
PY - 2024/10/18
Y1 - 2024/10/18
N2 - Over the past century, extensive research has been carried out on various types of microwave absorption (MA) materials, primarily emphasizing mechanism, performance, and even toward smart device. However, the deactivation, a crucial concern for practical applications, has long been long-neglected. In this work, an in-depth exploration of the deactivation mechanism reveals a significant competition between metal and oxygen, leading to the replacement of the S-M (M = Ni and Co) bond by a new S─O bond on the surface of absorber. This substitution initiates a series of collapse effect that introduces additional defective sites and diminishes the potential for charge transport. Subsequently, passive and active anti-deactivation strategies are developed to target the deactivation. The passive strategy involved intentionally creating electron-deficient structures at the initial Ni and Co sites in the crystal through the Fe doping engineering, with the objective of preventing the generation of S─O bonds. Furthermore, the active anti-deactivation strategy allows for the precise control of absorber deactivation and reactivation by employing accelerated thermodynamic and kinetic methods, enabling a reversible transformation of S-M through competitive reactions with S─O bonds. Finally, a fast deactivation and reactivation method is first proposed promising to stimulate further innovations and breakthroughs in practical applications.
AB - Over the past century, extensive research has been carried out on various types of microwave absorption (MA) materials, primarily emphasizing mechanism, performance, and even toward smart device. However, the deactivation, a crucial concern for practical applications, has long been long-neglected. In this work, an in-depth exploration of the deactivation mechanism reveals a significant competition between metal and oxygen, leading to the replacement of the S-M (M = Ni and Co) bond by a new S─O bond on the surface of absorber. This substitution initiates a series of collapse effect that introduces additional defective sites and diminishes the potential for charge transport. Subsequently, passive and active anti-deactivation strategies are developed to target the deactivation. The passive strategy involved intentionally creating electron-deficient structures at the initial Ni and Co sites in the crystal through the Fe doping engineering, with the objective of preventing the generation of S─O bonds. Furthermore, the active anti-deactivation strategy allows for the precise control of absorber deactivation and reactivation by employing accelerated thermodynamic and kinetic methods, enabling a reversible transformation of S-M through competitive reactions with S─O bonds. Finally, a fast deactivation and reactivation method is first proposed promising to stimulate further innovations and breakthroughs in practical applications.
KW - deactivation phenomenon
KW - deactivation/reactivation mechanisms
KW - microwave absorption (MA) materials
UR - http://www.scopus.com/inward/record.url?scp=85181460782&partnerID=8YFLogxK
U2 - 10.1002/smtd.202301600
DO - 10.1002/smtd.202301600
M3 - 文章
C2 - 38185797
AN - SCOPUS:85181460782
SN - 2366-9608
VL - 8
JO - Small Methods
JF - Small Methods
IS - 10
M1 - 2301600
ER -