CsFAMAPbIBr Photoelectric Memristor Based on Ion-Migration Induced Memristive Behavior

Shaoxi Wang; Xiangqi Dong; Yuxuan Xiong; Jian Sha; Yunguo Cao; Yupan Wu; Wei Li; Yue Yin; Yucheng Wang

doi:10.1002/aelm.202100014

CsFAMAPbIBr Photoelectric Memristor Based on Ion-Migration Induced Memristive Behavior

Shaoxi Wang, Xiangqi Dong, Yuxuan Xiong, Jian Sha, Yunguo Cao, Yupan Wu, Wei Li, Yue Yin, Yucheng Wang

Polytechnical University

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

New multifunctional artificial synaptic devices, which are capable of sensing various external information in addition to electrical stimuli and processing multiple signals in parallel in the same way biological synapses do, are in urgent need. Recently, several optical memristors are proposed to simulate photosynaptic plasticity for neuromorphic computing. Here, a light-responsive memristor is described based on Cs_0.05(FA_xMA₁₋_x)_0.95PbI_yBr₃₋_y (CsFAMAPbIBr), a kind of organometal trihalide perovskite (OTP) with outstanding photovoltaic properties and stability. Such a memristor with Al/CsFAMAPbIBr/SnO₂ doped with fluorine(SnO₂:F) structure exhibits notable resistive switching (RS) behavior, which is the basic characteristic for further implementing complex synaptic plasticity. Analysis suggests that the RS characteristic origins from intrinsic ion migration within the OTP layer, which modulates the Schottky barrier at the CsFAMAPbIBr/electrode interface. Moreover, the memristive characteristics of the devices can also be modified by reshaping the stacking devices’ architecture or by applying light stimuli. This work elaborates the correlation between RS behavior and the ion migration of OTP and provides insights on the light-responsive memristive mechanism of the memristor based on CsFAMAPbIBr.

Original language	English
Article number	2100014
Journal	Advanced Electronic Materials
Volume	7
Issue number	5
DOIs	https://doi.org/10.1002/aelm.202100014
State	Published - May 2021
Externally published	Yes

Keywords

ion migration
optical memristors
organometal trihalide perovskites
Schottky junctions

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1002/aelm.202100014

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title = "CsFAMAPbIBr Photoelectric Memristor Based on Ion-Migration Induced Memristive Behavior",

abstract = "New multifunctional artificial synaptic devices, which are capable of sensing various external information in addition to electrical stimuli and processing multiple signals in parallel in the same way biological synapses do, are in urgent need. Recently, several optical memristors are proposed to simulate photosynaptic plasticity for neuromorphic computing. Here, a light-responsive memristor is described based on Cs0.05(FAxMA1−x)0.95PbIyBr3−y (CsFAMAPbIBr), a kind of organometal trihalide perovskite (OTP) with outstanding photovoltaic properties and stability. Such a memristor with Al/CsFAMAPbIBr/SnO2 doped with fluorine(SnO2:F) structure exhibits notable resistive switching (RS) behavior, which is the basic characteristic for further implementing complex synaptic plasticity. Analysis suggests that the RS characteristic origins from intrinsic ion migration within the OTP layer, which modulates the Schottky barrier at the CsFAMAPbIBr/electrode interface. Moreover, the memristive characteristics of the devices can also be modified by reshaping the stacking devices{\textquoteright} architecture or by applying light stimuli. This work elaborates the correlation between RS behavior and the ion migration of OTP and provides insights on the light-responsive memristive mechanism of the memristor based on CsFAMAPbIBr.",

keywords = "ion migration, optical memristors, organometal trihalide perovskites, Schottky junctions",

author = "Shaoxi Wang and Xiangqi Dong and Yuxuan Xiong and Jian Sha and Yunguo Cao and Yupan Wu and Wei Li and Yue Yin and Yucheng Wang",

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T1 - CsFAMAPbIBr Photoelectric Memristor Based on Ion-Migration Induced Memristive Behavior

AU - Wang, Shaoxi

AU - Dong, Xiangqi

AU - Xiong, Yuxuan

AU - Sha, Jian

AU - Cao, Yunguo

AU - Wu, Yupan

AU - Li, Wei

AU - Yin, Yue

AU - Wang, Yucheng

PY - 2021/5

Y1 - 2021/5

N2 - New multifunctional artificial synaptic devices, which are capable of sensing various external information in addition to electrical stimuli and processing multiple signals in parallel in the same way biological synapses do, are in urgent need. Recently, several optical memristors are proposed to simulate photosynaptic plasticity for neuromorphic computing. Here, a light-responsive memristor is described based on Cs0.05(FAxMA1−x)0.95PbIyBr3−y (CsFAMAPbIBr), a kind of organometal trihalide perovskite (OTP) with outstanding photovoltaic properties and stability. Such a memristor with Al/CsFAMAPbIBr/SnO2 doped with fluorine(SnO2:F) structure exhibits notable resistive switching (RS) behavior, which is the basic characteristic for further implementing complex synaptic plasticity. Analysis suggests that the RS characteristic origins from intrinsic ion migration within the OTP layer, which modulates the Schottky barrier at the CsFAMAPbIBr/electrode interface. Moreover, the memristive characteristics of the devices can also be modified by reshaping the stacking devices’ architecture or by applying light stimuli. This work elaborates the correlation between RS behavior and the ion migration of OTP and provides insights on the light-responsive memristive mechanism of the memristor based on CsFAMAPbIBr.

AB - New multifunctional artificial synaptic devices, which are capable of sensing various external information in addition to electrical stimuli and processing multiple signals in parallel in the same way biological synapses do, are in urgent need. Recently, several optical memristors are proposed to simulate photosynaptic plasticity for neuromorphic computing. Here, a light-responsive memristor is described based on Cs0.05(FAxMA1−x)0.95PbIyBr3−y (CsFAMAPbIBr), a kind of organometal trihalide perovskite (OTP) with outstanding photovoltaic properties and stability. Such a memristor with Al/CsFAMAPbIBr/SnO2 doped with fluorine(SnO2:F) structure exhibits notable resistive switching (RS) behavior, which is the basic characteristic for further implementing complex synaptic plasticity. Analysis suggests that the RS characteristic origins from intrinsic ion migration within the OTP layer, which modulates the Schottky barrier at the CsFAMAPbIBr/electrode interface. Moreover, the memristive characteristics of the devices can also be modified by reshaping the stacking devices’ architecture or by applying light stimuli. This work elaborates the correlation between RS behavior and the ion migration of OTP and provides insights on the light-responsive memristive mechanism of the memristor based on CsFAMAPbIBr.

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KW - Schottky junctions

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CsFAMAPbIBr Photoelectric Memristor Based on Ion-Migration Induced Memristive Behavior

Abstract

Keywords

UN SDGs

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