Abstract
The images of the growing crystal in the growth process of the undercooled droplets of silicon were lively recorded by using a high-speed camera. The number of crystal that nucleated spontaneously from the undercooled liquid was found to decrease to 1 when the undercooling was higher than 5K. The morphology of the growing single crystal of silicon was a thin plate. A model for predicting the critical undercooling of growing single crystal of silicon from undercooled liquid has been developed. The theoretically predicted value of the undercooling from present model for silicon is in agreement with the experimentally measured result.
Original language | English |
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Pages (from-to) | 2603-2606 |
Number of pages | 4 |
Journal | Materials Science Forum |
Volume | 475-479 |
Issue number | IV |
DOIs | |
State | Published - 2005 |
Event | PRICM 5: The Fifth Pacific Rim International Conference on Advanced Materials and Processing - Beijing, China Duration: 2 Nov 2004 → 5 Nov 2004 |
Keywords
- Silicon
- Spherical single crystal
- Undercooling