Abstract
A single-phase HgInTe polycrystal has been synthesized directly from the high purity elements of Hg,In and Te in a rocking furnace. With the polycrystal materials, HgInTe single crystal has been successfully grown by vertical Bridgman method (VB). The results of X-ray diffraction analysis confirm that the as-grown crystal is single-phase of zinc-blende structure with lattice constant of a = 0.6293 nm and has good quality.
Original language | English |
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Pages (from-to) | 253-255 |
Number of pages | 3 |
Journal | Rengong Jingti Xuebao/Journal of Synthetic Crystals |
Volume | 36 |
Issue number | 2 |
State | Published - Apr 2007 |
Keywords
- Crystal growth
- HgInTe
- Near infrared receiver (NIR)
- Photovoltaic semiconductors
- Vertical Bridgman method