Crystal growth of Eu2PdSi3 containing volatile element by optical floating zone method

Yi Ku Xu; Dan Dan Wang; Xu Ding Song; Jin Li Yu; Jun Xia Xiao; Jian Min Hao; Lin Liu; Jun Zhang; Wolfgang Löser

Crystal growth of Eu₂PdSi₃ containing volatile element by optical floating zone method

Yi Ku Xu, Dan Dan Wang, Xu Ding Song, Jin Li Yu, Jun Xia Xiao, Jian Min Hao, Lin Liu, Jun Zhang, Wolfgang Löser

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

As a new type of disk storage material, single crystal growth of Eu₂PdSi₃ is a difficult problem because of the volatile element. In the study, Eu₂PdSi₃ crystals were grown by optical floating zone technique. Cellular structure was obtained when the feed rod was prepared according to stoichiometric ratio. It was indicated that constitutional supercooling occoured which was caused by the compositon shift of the melt. Bulk Eu₂PdSi₃ crystals were grown by feed rod composition shift method. It was found that volatile problem could be solved using feed rod composition shift method under the argon pressure higher than 3 MPa.

Original language	English
Pages (from-to)	1-5
Number of pages	5
Journal	Cailiao Rechuli Xuebao/Transactions of Materials and Heat Treatment
Volume	37
Issue number	3
State	Published - 25 Mar 2016

Keywords

Cellular structure
Floating zone technique
Rare earth compounds
Single crystal growth

Cite this

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title = "Crystal growth of Eu2PdSi3 containing volatile element by optical floating zone method",

abstract = "As a new type of disk storage material, single crystal growth of Eu2PdSi3 is a difficult problem because of the volatile element. In the study, Eu2PdSi3 crystals were grown by optical floating zone technique. Cellular structure was obtained when the feed rod was prepared according to stoichiometric ratio. It was indicated that constitutional supercooling occoured which was caused by the compositon shift of the melt. Bulk Eu2PdSi3 crystals were grown by feed rod composition shift method. It was found that volatile problem could be solved using feed rod composition shift method under the argon pressure higher than 3 MPa.",

keywords = "Cellular structure, Floating zone technique, Rare earth compounds, Single crystal growth",

author = "Xu, {Yi Ku} and Wang, {Dan Dan} and Song, {Xu Ding} and Yu, {Jin Li} and Xiao, {Jun Xia} and Hao, {Jian Min} and Lin Liu and Jun Zhang and Wolfgang L{\"o}ser",

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TY - JOUR

T1 - Crystal growth of Eu2PdSi3 containing volatile element by optical floating zone method

AU - Xu, Yi Ku

AU - Wang, Dan Dan

AU - Song, Xu Ding

AU - Yu, Jin Li

AU - Xiao, Jun Xia

AU - Hao, Jian Min

AU - Liu, Lin

AU - Zhang, Jun

AU - Löser, Wolfgang

PY - 2016/3/25

Y1 - 2016/3/25

N2 - As a new type of disk storage material, single crystal growth of Eu2PdSi3 is a difficult problem because of the volatile element. In the study, Eu2PdSi3 crystals were grown by optical floating zone technique. Cellular structure was obtained when the feed rod was prepared according to stoichiometric ratio. It was indicated that constitutional supercooling occoured which was caused by the compositon shift of the melt. Bulk Eu2PdSi3 crystals were grown by feed rod composition shift method. It was found that volatile problem could be solved using feed rod composition shift method under the argon pressure higher than 3 MPa.

AB - As a new type of disk storage material, single crystal growth of Eu2PdSi3 is a difficult problem because of the volatile element. In the study, Eu2PdSi3 crystals were grown by optical floating zone technique. Cellular structure was obtained when the feed rod was prepared according to stoichiometric ratio. It was indicated that constitutional supercooling occoured which was caused by the compositon shift of the melt. Bulk Eu2PdSi3 crystals were grown by feed rod composition shift method. It was found that volatile problem could be solved using feed rod composition shift method under the argon pressure higher than 3 MPa.

KW - Cellular structure

KW - Floating zone technique

KW - Rare earth compounds

KW - Single crystal growth

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M3 - 文章

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SN - 1009-6264

VL - 37

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JO - Cailiao Rechuli Xuebao/Transactions of Materials and Heat Treatment

JF - Cailiao Rechuli Xuebao/Transactions of Materials and Heat Treatment

IS - 3

ER -

Crystal growth of Eu₂PdSi₃ containing volatile element by optical floating zone method

Abstract

Keywords

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