Crystal growth and characterizations of diluted magnetic semiconductor MnxCd1-xIn2Te4

Wanqi Jie; Yongqin Chang; Weijun An

doi:10.1016/j.mssp.2005.01.002

Crystal growth and characterizations of diluted magnetic semiconductor Mn_xCd_1-xIn₂Te₄

Wanqi Jie, Yongqin Chang, Weijun An

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

Abstract

Single crystals of diluted magnetic semiconductor Cd_1- _xMn_xIn₂Te₄ with x=0.1, 0.22 and 0.4 were grown by the Bridgman method. Several regions composed of α+β1, α+β+β1, β and In₂Te₃+Te phases were found to crystallize in orders due to the solute partition at the growth interface. The magnetic susceptibility and Kerr effect of β-phase crystals with different compositions cut from the ingot were measured. The results revealed the anti-ferromagnetic interactions between Mn²⁺ ions in the crystal. Meanwhile, the negative rotation angles for x=0.1 and 0.22 and positive with small values for x=0.4 were detected.

Original language	English
Pages (from-to)	564-567
Number of pages	4
Journal	Materials Science in Semiconductor Processing
Volume	8
Issue number	4
DOIs	https://doi.org/10.1016/j.mssp.2005.01.002
State	Published - Aug 2005

Keywords

CdMn InTe
Crystal growth
Diluted magnetic semiconductor
Kerr effect
Magnetic susceptibility

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10.1016/j.mssp.2005.01.002

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title = "Crystal growth and characterizations of diluted magnetic semiconductor MnxCd1-xIn2Te4",

abstract = "Single crystals of diluted magnetic semiconductor Cd1- xMnxIn2Te4 with x=0.1, 0.22 and 0.4 were grown by the Bridgman method. Several regions composed of α+β1, α+β+β1, β and In2Te3+Te phases were found to crystallize in orders due to the solute partition at the growth interface. The magnetic susceptibility and Kerr effect of β-phase crystals with different compositions cut from the ingot were measured. The results revealed the anti-ferromagnetic interactions between Mn2+ ions in the crystal. Meanwhile, the negative rotation angles for x=0.1 and 0.22 and positive with small values for x=0.4 were detected.",

keywords = "CdMn InTe, Crystal growth, Diluted magnetic semiconductor, Kerr effect, Magnetic susceptibility",

author = "Wanqi Jie and Yongqin Chang and Weijun An",

year = "2005",

month = aug,

doi = "10.1016/j.mssp.2005.01.002",

language = "英语",

volume = "8",

pages = "564--567",

journal = "Materials Science in Semiconductor Processing",

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publisher = "Elsevier Ltd",

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TY - JOUR

T1 - Crystal growth and characterizations of diluted magnetic semiconductor MnxCd1-xIn2Te4

AU - Jie, Wanqi

AU - Chang, Yongqin

AU - An, Weijun

PY - 2005/8

Y1 - 2005/8

N2 - Single crystals of diluted magnetic semiconductor Cd1- xMnxIn2Te4 with x=0.1, 0.22 and 0.4 were grown by the Bridgman method. Several regions composed of α+β1, α+β+β1, β and In2Te3+Te phases were found to crystallize in orders due to the solute partition at the growth interface. The magnetic susceptibility and Kerr effect of β-phase crystals with different compositions cut from the ingot were measured. The results revealed the anti-ferromagnetic interactions between Mn2+ ions in the crystal. Meanwhile, the negative rotation angles for x=0.1 and 0.22 and positive with small values for x=0.4 were detected.

AB - Single crystals of diluted magnetic semiconductor Cd1- xMnxIn2Te4 with x=0.1, 0.22 and 0.4 were grown by the Bridgman method. Several regions composed of α+β1, α+β+β1, β and In2Te3+Te phases were found to crystallize in orders due to the solute partition at the growth interface. The magnetic susceptibility and Kerr effect of β-phase crystals with different compositions cut from the ingot were measured. The results revealed the anti-ferromagnetic interactions between Mn2+ ions in the crystal. Meanwhile, the negative rotation angles for x=0.1 and 0.22 and positive with small values for x=0.4 were detected.

KW - CdMn InTe

KW - Crystal growth

KW - Diluted magnetic semiconductor

KW - Kerr effect

KW - Magnetic susceptibility

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U2 - 10.1016/j.mssp.2005.01.002

DO - 10.1016/j.mssp.2005.01.002

M3 - 文章

AN - SCOPUS:18244376882

SN - 1369-8001

VL - 8

SP - 564

EP - 567

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 4

ER -

Crystal growth and characterizations of diluted magnetic semiconductor Mn_xCd_1-xIn₂Te₄

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