TY - JOUR
T1 - Crystal growth and characterization of Cd0.8Mn0.2Te using Vertical Bridgman method
AU - Zhang, Jijun
AU - Jie, Wanqi
AU - Wang, Tao
AU - Zeng, Dongmei
AU - Ma, Shuying
AU - Hua, Hui
AU - Yang, Bo
PY - 2008/5/6
Y1 - 2008/5/6
N2 - By Vertical Bridgman method, several Cd0.8Mn0.2Te (CdMnTe) ingots were grown. The structure and crystallinity of the ingots were evaluated by X-ray powder diffraction and double-crystal rocking curve measurement and etch pits density (EPD) measurement. The results showed a pure cubic zinc blende structure throughout the ingots with the full width at half maximum (FWHM) of 40-70 arcsec and EPD of (6-8) × 104 cm-2, indicating a high crystalline perfection. The Mn concentration distribution along the axial and radial direction of the ingots was measured by inductively coupled plasma atomic emission spectrometer (ICP-AES). The segregation coefficient keff for Mn along the axis of the ingots is determined to be 0.95, and the radial variation of Mn concentration is within 0.002. Current-voltage (I-V) measurement reveals that sputtered Au film can form good ohmic contact to CdMnTe wafer and all the wafers of the as-grown crystals have the resistivity within (1-4) × 106 Ω cm. IR transmission measurement in the wave number region from 4000 to 1000 cm-1 exhibits that the IR transmittance of CdMnTe wafers is 50-55%, which is close to the theoretical value.
AB - By Vertical Bridgman method, several Cd0.8Mn0.2Te (CdMnTe) ingots were grown. The structure and crystallinity of the ingots were evaluated by X-ray powder diffraction and double-crystal rocking curve measurement and etch pits density (EPD) measurement. The results showed a pure cubic zinc blende structure throughout the ingots with the full width at half maximum (FWHM) of 40-70 arcsec and EPD of (6-8) × 104 cm-2, indicating a high crystalline perfection. The Mn concentration distribution along the axial and radial direction of the ingots was measured by inductively coupled plasma atomic emission spectrometer (ICP-AES). The segregation coefficient keff for Mn along the axis of the ingots is determined to be 0.95, and the radial variation of Mn concentration is within 0.002. Current-voltage (I-V) measurement reveals that sputtered Au film can form good ohmic contact to CdMnTe wafer and all the wafers of the as-grown crystals have the resistivity within (1-4) × 106 Ω cm. IR transmission measurement in the wave number region from 4000 to 1000 cm-1 exhibits that the IR transmittance of CdMnTe wafers is 50-55%, which is close to the theoretical value.
KW - A. Semiconductor
KW - B. Crystal growth
KW - C. X-ray diffraction
KW - D. Electrical properties
KW - D. Optical properties
UR - http://www.scopus.com/inward/record.url?scp=40749094437&partnerID=8YFLogxK
U2 - 10.1016/j.materresbull.2007.05.029
DO - 10.1016/j.materresbull.2007.05.029
M3 - 文章
AN - SCOPUS:40749094437
SN - 0025-5408
VL - 43
SP - 1239
EP - 1245
JO - Materials Research Bulletin
JF - Materials Research Bulletin
IS - 5
ER -