TY - JOUR
T1 - Correlation between the low-temperature PL spectra and Cd 0.9Zn0.1Te quality
AU - Li, Guoqiang
AU - Zhang, Xiaolu
AU - Jie, Wanqi
PY - 2005/1
Y1 - 2005/1
N2 - The low-temperature photoluminescence (PL) measurements revealed that Cd0.9Zn0.1Te PL spectra consisted of three regions: the near-band-edge region with an emission peak I0 situated at 1.66 eV related to the free and bound excitons, the donor-acceptor region with an emission peak I1 centred at 1.62 eV related to the impurities, and a defect-band region with an emission peak I2 centred at 1.50 eV due to the dislocations. The near-band-edge region was dominated by the donor bound exciton peak (I0) for high-quality Cd0.9Zn 0.1Te, but dominated by the acceptor bound exciton peak for low-quality Cd0.9Zn0.1Te. For all high- and low-quality Cd0.9Zn0.1Te, the full width at half maximum of I 0 can be used to evaluate the overall quality of the crystal, and the PL peak intensity ratios of I1/I0 and I 2/I0 could be employed to reflect the impurity concentration and dislocation density of the crystal, respectively.
AB - The low-temperature photoluminescence (PL) measurements revealed that Cd0.9Zn0.1Te PL spectra consisted of three regions: the near-band-edge region with an emission peak I0 situated at 1.66 eV related to the free and bound excitons, the donor-acceptor region with an emission peak I1 centred at 1.62 eV related to the impurities, and a defect-band region with an emission peak I2 centred at 1.50 eV due to the dislocations. The near-band-edge region was dominated by the donor bound exciton peak (I0) for high-quality Cd0.9Zn 0.1Te, but dominated by the acceptor bound exciton peak for low-quality Cd0.9Zn0.1Te. For all high- and low-quality Cd0.9Zn0.1Te, the full width at half maximum of I 0 can be used to evaluate the overall quality of the crystal, and the PL peak intensity ratios of I1/I0 and I 2/I0 could be employed to reflect the impurity concentration and dislocation density of the crystal, respectively.
UR - http://www.scopus.com/inward/record.url?scp=12144272614&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/20/1/014
DO - 10.1088/0268-1242/20/1/014
M3 - 文章
AN - SCOPUS:12144272614
SN - 0268-1242
VL - 20
SP - 86
EP - 89
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 1
ER -