Correlation between the IR Transmission Spectra and the CdZnTe Qualities

Guo Qiang Li; Wan Qi Jie; Zhi Gu; Hui Hua

doi:10.1088/0256-307X/20/9/355

Correlation between the IR Transmission Spectra and the CdZnTe Qualities

Guo Qiang Li, Wan Qi Jie, Zhi Gu, Hui Hua

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

Tens of Cd_0.9Zn_0.1Te wafers from three ingots grown by the vertical Bridgman method (VBM) are characterized by infrared (IR) transmission. Four types of distinct IR transmission spectra are found for these wafers. Each of them corresponds to one kind of wafers with specified qualities. At the same time, approximate mathematical relations exist between the wafer dislocation density and their IR transmissions at the wavenumber 4000cm^-1, as well as between the resistivity and the IR transmissions at the wavenumber 500cm^-1. The reasons of the above results are attempted to be given.

Original language	English
Pages (from-to)	1600-1602
Number of pages	3
Journal	Chinese Physics Letters
Volume	20
Issue number	9
DOIs	https://doi.org/10.1088/0256-307X/20/9/355
State	Published - Sep 2003

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abstract = "Tens of Cd0.9Zn0.1Te wafers from three ingots grown by the vertical Bridgman method (VBM) are characterized by infrared (IR) transmission. Four types of distinct IR transmission spectra are found for these wafers. Each of them corresponds to one kind of wafers with specified qualities. At the same time, approximate mathematical relations exist between the wafer dislocation density and their IR transmissions at the wavenumber 4000cm-1, as well as between the resistivity and the IR transmissions at the wavenumber 500cm-1. The reasons of the above results are attempted to be given.",

author = "Li, {Guo Qiang} and Jie, {Wan Qi} and Zhi Gu and Hui Hua",

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AU - Li, Guo Qiang

AU - Jie, Wan Qi

AU - Gu, Zhi

AU - Hua, Hui

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N2 - Tens of Cd0.9Zn0.1Te wafers from three ingots grown by the vertical Bridgman method (VBM) are characterized by infrared (IR) transmission. Four types of distinct IR transmission spectra are found for these wafers. Each of them corresponds to one kind of wafers with specified qualities. At the same time, approximate mathematical relations exist between the wafer dislocation density and their IR transmissions at the wavenumber 4000cm-1, as well as between the resistivity and the IR transmissions at the wavenumber 500cm-1. The reasons of the above results are attempted to be given.

AB - Tens of Cd0.9Zn0.1Te wafers from three ingots grown by the vertical Bridgman method (VBM) are characterized by infrared (IR) transmission. Four types of distinct IR transmission spectra are found for these wafers. Each of them corresponds to one kind of wafers with specified qualities. At the same time, approximate mathematical relations exist between the wafer dislocation density and their IR transmissions at the wavenumber 4000cm-1, as well as between the resistivity and the IR transmissions at the wavenumber 500cm-1. The reasons of the above results are attempted to be given.

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VL - 20

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JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 9

ER -

Correlation between the IR Transmission Spectra and the CdZnTe Qualities

Abstract

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