Core-shell and hollow particles of carbon and SiC prepared from hydrochar

Wenming Hao; Yongsheng Liu; Alexandra Neagu; Zoltan Bacsik; Cheuk Wai Tai; Zhijian Shen; Niklas Hedin

doi:10.3390/ma12111835

Core-shell and hollow particles of carbon and SiC prepared from hydrochar

Wenming Hao, Yongsheng Liu, Alexandra Neagu, Zoltan Bacsik, Cheuk Wai Tai, Zhijian Shen, Niklas Hedin

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The applications of silicon carbide (SiC) include lightweight materials with thermal shock resistance. In this study, core-shell C-SiC particles were synthesized by compacting and rapidly heating a hydrochar from glucose by using strong pulsed currents and infiltration of silicon vapor. Hollow particles of SiC formed on removing the carbon template. In contrast to related studies, we detected not only the pure 3C polytype (β-SiC) but also significant amounts of the 2H or the 6H polytypes (β-SiC) in the SiC.

Original language	English
Article number	1835
Journal	Materials
Volume	12
Issue number	11
DOIs	https://doi.org/10.3390/ma12111835
State	Published - 1 Jun 2019
Externally published	Yes

Keywords

Hollow spheres
Hydrothermal carbonization
Pulse current treatment
Silicon carbide
Silicon infiltration

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10.3390/ma12111835

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title = "Core-shell and hollow particles of carbon and SiC prepared from hydrochar",

abstract = "The applications of silicon carbide (SiC) include lightweight materials with thermal shock resistance. In this study, core-shell C-SiC particles were synthesized by compacting and rapidly heating a hydrochar from glucose by using strong pulsed currents and infiltration of silicon vapor. Hollow particles of SiC formed on removing the carbon template. In contrast to related studies, we detected not only the pure 3C polytype (β-SiC) but also significant amounts of the 2H or the 6H polytypes (β-SiC) in the SiC.",

keywords = "Hollow spheres, Hydrothermal carbonization, Pulse current treatment, Silicon carbide, Silicon infiltration",

author = "Wenming Hao and Yongsheng Liu and Alexandra Neagu and Zoltan Bacsik and Tai, {Cheuk Wai} and Zhijian Shen and Niklas Hedin",

note = "Publisher Copyright: {\textcopyright} 2019 by the authors.",

year = "2019",

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doi = "10.3390/ma12111835",

language = "英语",

volume = "12",

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T1 - Core-shell and hollow particles of carbon and SiC prepared from hydrochar

AU - Hao, Wenming

AU - Liu, Yongsheng

AU - Neagu, Alexandra

AU - Bacsik, Zoltan

AU - Tai, Cheuk Wai

AU - Shen, Zhijian

AU - Hedin, Niklas

PY - 2019/6/1

Y1 - 2019/6/1

N2 - The applications of silicon carbide (SiC) include lightweight materials with thermal shock resistance. In this study, core-shell C-SiC particles were synthesized by compacting and rapidly heating a hydrochar from glucose by using strong pulsed currents and infiltration of silicon vapor. Hollow particles of SiC formed on removing the carbon template. In contrast to related studies, we detected not only the pure 3C polytype (β-SiC) but also significant amounts of the 2H or the 6H polytypes (β-SiC) in the SiC.

AB - The applications of silicon carbide (SiC) include lightweight materials with thermal shock resistance. In this study, core-shell C-SiC particles were synthesized by compacting and rapidly heating a hydrochar from glucose by using strong pulsed currents and infiltration of silicon vapor. Hollow particles of SiC formed on removing the carbon template. In contrast to related studies, we detected not only the pure 3C polytype (β-SiC) but also significant amounts of the 2H or the 6H polytypes (β-SiC) in the SiC.

KW - Hollow spheres

KW - Hydrothermal carbonization

KW - Pulse current treatment

KW - Silicon carbide

KW - Silicon infiltration

UR - http://www.scopus.com/inward/record.url?scp=85067301341&partnerID=8YFLogxK

U2 - 10.3390/ma12111835

DO - 10.3390/ma12111835

M3 - 文章

AN - SCOPUS:85067301341

SN - 1996-1944

VL - 12

JO - Materials

JF - Materials

IS - 11

M1 - 1835

ER -

Core-shell and hollow particles of carbon and SiC prepared from hydrochar

Abstract

Keywords

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