TY - JOUR
T1 - Controlling electronic and optical properties of layered SiC and GeC sheets by strain engineering
AU - Xu, Zhuo
AU - Li, Yangping
AU - Liu, Zhengtang
N1 - Publisher Copyright:
© 2016 Elsevier Ltd
PY - 2016/10/15
Y1 - 2016/10/15
N2 - The structural, electronic, and optical properties of optimized layered SiC and GeC in a two-dimensional honeycomb structure are analyzed based on the density functional theory. The stability is testified by analysis of phonon dispersion curves. The variations of electronic and optical properties of layered SiC and GeC under in-plane and out-of-plane strain effect are also investigated. The results show that tunable band structures and optical properties of layered SiC and GeC, such as indirect–direct band gap transition, shrink and enlargement of band gaps, red and blue shift of absorption peaks, can be achieved by applying strain. These results provide new routes for tailoring the electronic and optical properties of these ultrathin nanofilms, which demonstrate new potential applications of these materials in optoelectronics and energy engineering.
AB - The structural, electronic, and optical properties of optimized layered SiC and GeC in a two-dimensional honeycomb structure are analyzed based on the density functional theory. The stability is testified by analysis of phonon dispersion curves. The variations of electronic and optical properties of layered SiC and GeC under in-plane and out-of-plane strain effect are also investigated. The results show that tunable band structures and optical properties of layered SiC and GeC, such as indirect–direct band gap transition, shrink and enlargement of band gaps, red and blue shift of absorption peaks, can be achieved by applying strain. These results provide new routes for tailoring the electronic and optical properties of these ultrathin nanofilms, which demonstrate new potential applications of these materials in optoelectronics and energy engineering.
KW - Electronic and optical properties
KW - First-principles
KW - In-plane and out-of-plane strain
KW - Layered SiC and GeC
UR - http://www.scopus.com/inward/record.url?scp=84978952329&partnerID=8YFLogxK
U2 - 10.1016/j.matdes.2016.06.115
DO - 10.1016/j.matdes.2016.06.115
M3 - 文章
AN - SCOPUS:84978952329
SN - 0264-1275
VL - 108
SP - 333
EP - 342
JO - Materials and Design
JF - Materials and Design
ER -