TY - JOUR
T1 - Controlled Synthesis of Atomically Thin 1T-TaS2 for Tunable Charge Density Wave Phase Transitions
AU - Fu, Wei
AU - Chen, Yu
AU - Lin, Junhao
AU - Wang, Xuewen
AU - Zeng, Qingsheng
AU - Zhou, Jiadong
AU - Zheng, Lu
AU - Wang, Hong
AU - He, Yongmin
AU - He, Haiyong
AU - Fu, Qundong
AU - Suenaga, Kazutomo
AU - Yu, Ting
AU - Liu, Zheng
N1 - Publisher Copyright:
© 2016 American Chemical Society.
PY - 2016/11/8
Y1 - 2016/11/8
N2 - The charge density wave (CDW) in two-dimensional (2D) materials is attracting substantial interest because of its magnificent many-body collective phenomena. Various CDW phases have been observed in several 2D materials before they reach the phase of superconductivity. However, to date, the atomically thin CDW materials were mainly fabricated by mechanically exfoliating from their bulk counterparts, which leads to low production yield and small sample sizes. Here, we report the controlled synthesis of atomically thin 1T-TaS2, a typical CDW material, by a chemical vapor deposition (CVD) method. The high quality of as-grown 1T-TaS2 has been confirmed by complementary characterization technologies. Moreover, the thickness-dependent CDW phase transitions have been revealed in these ultrathin flakes by temperature-dependent Raman spectra. This work opens up a new window for the large-scale synthesis of ultrathin CDW materials and sheds light on the fabrication of next-generation electronic devices.
AB - The charge density wave (CDW) in two-dimensional (2D) materials is attracting substantial interest because of its magnificent many-body collective phenomena. Various CDW phases have been observed in several 2D materials before they reach the phase of superconductivity. However, to date, the atomically thin CDW materials were mainly fabricated by mechanically exfoliating from their bulk counterparts, which leads to low production yield and small sample sizes. Here, we report the controlled synthesis of atomically thin 1T-TaS2, a typical CDW material, by a chemical vapor deposition (CVD) method. The high quality of as-grown 1T-TaS2 has been confirmed by complementary characterization technologies. Moreover, the thickness-dependent CDW phase transitions have been revealed in these ultrathin flakes by temperature-dependent Raman spectra. This work opens up a new window for the large-scale synthesis of ultrathin CDW materials and sheds light on the fabrication of next-generation electronic devices.
UR - http://www.scopus.com/inward/record.url?scp=84994480572&partnerID=8YFLogxK
U2 - 10.1021/acs.chemmater.6b02334
DO - 10.1021/acs.chemmater.6b02334
M3 - 文章
AN - SCOPUS:84994480572
SN - 0897-4756
VL - 28
SP - 7613
EP - 7618
JO - Chemistry of Materials
JF - Chemistry of Materials
IS - 21
ER -