Constructing a High-Quality t-Se/Si Interface Via In Situ Light Annealing of a-Se for a Self-Powered Image Sensor

Yu Chang, Yingcai Zhou, Jianyuan Wang, Wei Zhai

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

The quality of the interface, e.g., the semiconductor–semiconductor or metal–semiconductor interface, is the main factor restricting the photodetection performance of a heterojunction. In this study, a high-quality Se/Si interface is constructed via in situ directional transformation of amorphous Se (a-Se) into crystalline Se (t-Se) on a Si substrate via light annealing. Benefitting from the high-quality interface and appropriate energy band between Si and Se, the t-Se/Si heterojunction exhibits an extremely high responsivity and detectivity of 583.33 mA W−1 and 8.52 × 1012 Jones at 760 nm, respectively. In addition, the device exhibits an ultrafast rise time of 183 µs and a decay time of 405 µs. Furthermore, an image sensor fabricated via local light annealing successfully recognizes patterns of “N,” “P,” and “U.” This study provides valuable guidance for the construction of high-quality interfaces and the design of self-powered image sensors.

Original languageEnglish
Article number2201714
JournalSmall
Volume18
Issue number25
DOIs
StatePublished - 23 Jun 2022

Keywords

  • image sensors
  • light annealing
  • phase transitions
  • selenium
  • silicon

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