Characterization of CdZnTe co-doped with indium and lead

Yasir Zaman; Wanqi Jie; Tao Wang; Yihui He; Lingyan Xu; Rongrong Guo; Yadong Xu; Gangqiang Zha

doi:10.1016/j.nima.2014.10.010

Characterization of CdZnTe co-doped with indium and lead

Yasir Zaman, Wanqi Jie, Tao Wang, Yihui He, Lingyan Xu, Rongrong Guo, Yadong Xu, Gangqiang Zha

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Indium and lead co-doped Cd_0.9Zn_0.1Te (CZT:(In,Pb)) were characterized by using I-V measurement, thermally stimulated current (TSC) spectroscopy and time-of-flight (TOF). The concentration of doping level of In and Pb was 10 ppm and 2 ppm, respectively. I-V curves showed that CZT:(In,Pb) possessed the resistivity as high as 1.8 × 10¹⁰ Ω cm, and the mobility (μ) of about 868 cm²/V s, which is considered acceptable for detector's fabrication. However, the carrier life time (τ) was only 9.44 × 10^-7 s. Therefore, the μτ (mobility life time product) value was low. TSC results showed thirteen different trap levels, which were much more than that in Indium doped CZT crystal. Several special traps associated with lead were found, which might be the reason for the low carrier life time.

Original language	English
Pages (from-to)	48-51
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	770
DOIs	https://doi.org/10.1016/j.nima.2014.10.010
State	Published - 11 Jan 2015

Keywords

A1 characterization
A1 defects
A1 doping
A2 bridgman technique
B1 cadmium compounds

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title = "Characterization of CdZnTe co-doped with indium and lead",

abstract = "Indium and lead co-doped Cd0.9Zn0.1Te (CZT:(In,Pb)) were characterized by using I-V measurement, thermally stimulated current (TSC) spectroscopy and time-of-flight (TOF). The concentration of doping level of In and Pb was 10 ppm and 2 ppm, respectively. I-V curves showed that CZT:(In,Pb) possessed the resistivity as high as 1.8 × 1010 Ω cm, and the mobility (μ) of about 868 cm2/V s, which is considered acceptable for detector's fabrication. However, the carrier life time (τ) was only 9.44 × 10-7 s. Therefore, the μτ (mobility life time product) value was low. TSC results showed thirteen different trap levels, which were much more than that in Indium doped CZT crystal. Several special traps associated with lead were found, which might be the reason for the low carrier life time.",

keywords = "A1 characterization, A1 defects, A1 doping, A2 bridgman technique, B1 cadmium compounds",

author = "Yasir Zaman and Wanqi Jie and Tao Wang and Yihui He and Lingyan Xu and Rongrong Guo and Yadong Xu and Gangqiang Zha",

year = "2015",

month = jan,

day = "11",

doi = "10.1016/j.nima.2014.10.010",

language = "英语",

volume = "770",

pages = "48--51",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

issn = "0168-9002",

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TY - JOUR

T1 - Characterization of CdZnTe co-doped with indium and lead

AU - Zaman, Yasir

AU - Jie, Wanqi

AU - Wang, Tao

AU - He, Yihui

AU - Xu, Lingyan

AU - Guo, Rongrong

AU - Xu, Yadong

AU - Zha, Gangqiang

PY - 2015/1/11

Y1 - 2015/1/11

N2 - Indium and lead co-doped Cd0.9Zn0.1Te (CZT:(In,Pb)) were characterized by using I-V measurement, thermally stimulated current (TSC) spectroscopy and time-of-flight (TOF). The concentration of doping level of In and Pb was 10 ppm and 2 ppm, respectively. I-V curves showed that CZT:(In,Pb) possessed the resistivity as high as 1.8 × 1010 Ω cm, and the mobility (μ) of about 868 cm2/V s, which is considered acceptable for detector's fabrication. However, the carrier life time (τ) was only 9.44 × 10-7 s. Therefore, the μτ (mobility life time product) value was low. TSC results showed thirteen different trap levels, which were much more than that in Indium doped CZT crystal. Several special traps associated with lead were found, which might be the reason for the low carrier life time.

AB - Indium and lead co-doped Cd0.9Zn0.1Te (CZT:(In,Pb)) were characterized by using I-V measurement, thermally stimulated current (TSC) spectroscopy and time-of-flight (TOF). The concentration of doping level of In and Pb was 10 ppm and 2 ppm, respectively. I-V curves showed that CZT:(In,Pb) possessed the resistivity as high as 1.8 × 1010 Ω cm, and the mobility (μ) of about 868 cm2/V s, which is considered acceptable for detector's fabrication. However, the carrier life time (τ) was only 9.44 × 10-7 s. Therefore, the μτ (mobility life time product) value was low. TSC results showed thirteen different trap levels, which were much more than that in Indium doped CZT crystal. Several special traps associated with lead were found, which might be the reason for the low carrier life time.

KW - A1 characterization

KW - A1 defects

KW - A1 doping

KW - A2 bridgman technique

KW - B1 cadmium compounds

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U2 - 10.1016/j.nima.2014.10.010

DO - 10.1016/j.nima.2014.10.010

M3 - 文章

AN - SCOPUS:84908541935

SN - 0168-9002

VL - 770

SP - 48

EP - 51

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

ER -

Characterization of CdZnTe co-doped with indium and lead

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Keywords

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