Abstract
Si3N4p/Si3N4 radome material was prepared by chemical vapor infiltration (CVI) with SiCl4-NH3-H2 systems. XRF analysis shows the specimen mainly contains Si, N, O three kinds of elements. XRD patterns indicate the sample consists of α-Si3N4, amorphous deposit, noncrystalline SiO2, small amount of β-Si3N4 and Si. Amorphous deposit can be converted into α-Si3N4 and β-Si3N4 by high temperature heat treatment. SEM photographs show weak bonding and large pores exist among granulae. Maximum flexural strength of the samples is 94 MPa, and dielectric constants are between 4.1 and 4.8.
Original language | English |
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Pages (from-to) | 979-985 |
Number of pages | 7 |
Journal | Wuji Cailiao Xuebao/Journal of Inorganic Materials |
Volume | 21 |
Issue number | 4 |
State | Published - Jul 2006 |
Keywords
- Chemical vapor infiltration (CVI)
- Dielectric constant
- Flexural strength
- SiN/SiN radome material