CdZnTe Energy Levels Induced by Doping of Indium

Guo Qiang Li; Wan Qi Jie; Zhi Gu; Ge Yang; Tao Wang

doi:10.1088/0256-307X/21/2/043

CdZnTe Energy Levels Induced by Doping of Indium

Guo Qiang Li, Wan Qi Jie, Zhi Gu, Ge Yang, Tao Wang

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Photoluminescence (PL) and infrared transmission spectra are used to characterize In-doped Cd_0.9Zn_0.1 Te (CdZnTe:In). The PL spectrum reveals that there are two other strong emissions situated at 1.54eV and 1.62eV as well as the near band edge emission. This indicates that the doped In can lead to two donor levels of 0.12eV and 0.04eV in the CdZnTe band construction, respectively. The IR transmission spectra show that when the wavenumber is larger than 1000cm^-1, the CdZnTe:In was almost opaque to the IR emission. Then its IR transmission rapidly increases to 52% when the wavenumber is decreased to 350cm^-1 and then holds constant. This confirms the existence of the donor level of 0.12eV.

Original language	English
Pages (from-to)	367-369
Number of pages	3
Journal	Chinese Physics Letters
Volume	21
Issue number	2
DOIs	https://doi.org/10.1088/0256-307X/21/2/043
State	Published - Feb 2004

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@article{e727efc5c3de46f7b46afb61325cd328,

title = "CdZnTe Energy Levels Induced by Doping of Indium",

abstract = "Photoluminescence (PL) and infrared transmission spectra are used to characterize In-doped Cd0.9Zn0.1 Te (CdZnTe:In). The PL spectrum reveals that there are two other strong emissions situated at 1.54eV and 1.62eV as well as the near band edge emission. This indicates that the doped In can lead to two donor levels of 0.12eV and 0.04eV in the CdZnTe band construction, respectively. The IR transmission spectra show that when the wavenumber is larger than 1000cm-1, the CdZnTe:In was almost opaque to the IR emission. Then its IR transmission rapidly increases to 52% when the wavenumber is decreased to 350cm-1 and then holds constant. This confirms the existence of the donor level of 0.12eV.",

author = "Li, {Guo Qiang} and Jie, {Wan Qi} and Zhi Gu and Ge Yang and Tao Wang",

year = "2004",

month = feb,

doi = "10.1088/0256-307X/21/2/043",

language = "英语",

volume = "21",

pages = "367--369",

journal = "Chinese Physics Letters",

issn = "0256-307X",

publisher = "IOP Publishing Ltd.",

number = "2",

}

TY - JOUR

T1 - CdZnTe Energy Levels Induced by Doping of Indium

AU - Li, Guo Qiang

AU - Jie, Wan Qi

AU - Gu, Zhi

AU - Yang, Ge

AU - Wang, Tao

PY - 2004/2

Y1 - 2004/2

N2 - Photoluminescence (PL) and infrared transmission spectra are used to characterize In-doped Cd0.9Zn0.1 Te (CdZnTe:In). The PL spectrum reveals that there are two other strong emissions situated at 1.54eV and 1.62eV as well as the near band edge emission. This indicates that the doped In can lead to two donor levels of 0.12eV and 0.04eV in the CdZnTe band construction, respectively. The IR transmission spectra show that when the wavenumber is larger than 1000cm-1, the CdZnTe:In was almost opaque to the IR emission. Then its IR transmission rapidly increases to 52% when the wavenumber is decreased to 350cm-1 and then holds constant. This confirms the existence of the donor level of 0.12eV.

AB - Photoluminescence (PL) and infrared transmission spectra are used to characterize In-doped Cd0.9Zn0.1 Te (CdZnTe:In). The PL spectrum reveals that there are two other strong emissions situated at 1.54eV and 1.62eV as well as the near band edge emission. This indicates that the doped In can lead to two donor levels of 0.12eV and 0.04eV in the CdZnTe band construction, respectively. The IR transmission spectra show that when the wavenumber is larger than 1000cm-1, the CdZnTe:In was almost opaque to the IR emission. Then its IR transmission rapidly increases to 52% when the wavenumber is decreased to 350cm-1 and then holds constant. This confirms the existence of the donor level of 0.12eV.

UR - http://www.scopus.com/inward/record.url?scp=1042267625&partnerID=8YFLogxK

U2 - 10.1088/0256-307X/21/2/043

DO - 10.1088/0256-307X/21/2/043

M3 - 文章

AN - SCOPUS:1042267625

SN - 0256-307X

VL - 21

SP - 367

EP - 369

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 2

ER -

CdZnTe Energy Levels Induced by Doping of Indium

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