Catalyst-free growth of high purity 3C-SiC nanowires film on a graphite paper by sol-gel and ICVI carbothermal reduction

Hongjiao Lin; Hejun Li; Qingliang Shen; Xiaohong Shi; Xinfa Tian; Lingjun Guo

doi:10.1016/j.matlet.2017.10.073

Catalyst-free growth of high purity 3C-SiC nanowires film on a graphite paper by sol-gel and ICVI carbothermal reduction

Hongjiao Lin, Hejun Li, Qingliang Shen, Xiaohong Shi, Xinfa Tian, Lingjun Guo

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

3C-SiC nanowires have been synthesized without any catalyst by carbothermal reduction method, which obtained silicon and carbon source from sol-gel impregnation and isothermal chemical vapor immersion (ICVI) process respectively. The microstructure analysis by SEM showed the nanowires with a diameter of ∼200 nm and a length of several millimeters were hierarchical. TEM images and XRD data from the nanowires revealed them to have the cubic 3C-SiC structure. The vapor solid epitaxial mechanism was also proposed to explain the growth process.

Original language	English
Pages (from-to)	86-89
Number of pages	4
Journal	Materials Letters
Volume	212
DOIs	https://doi.org/10.1016/j.matlet.2017.10.073
State	Published - 1 Feb 2018

Keywords

Carbothermal reduction
Crystal growth
ICVI
SiC nanowires
Sol-gel preparation

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10.1016/j.matlet.2017.10.073

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title = "Catalyst-free growth of high purity 3C-SiC nanowires film on a graphite paper by sol-gel and ICVI carbothermal reduction",

abstract = "3C-SiC nanowires have been synthesized without any catalyst by carbothermal reduction method, which obtained silicon and carbon source from sol-gel impregnation and isothermal chemical vapor immersion (ICVI) process respectively. The microstructure analysis by SEM showed the nanowires with a diameter of ∼200 nm and a length of several millimeters were hierarchical. TEM images and XRD data from the nanowires revealed them to have the cubic 3C-SiC structure. The vapor solid epitaxial mechanism was also proposed to explain the growth process.",

keywords = "Carbothermal reduction, Crystal growth, ICVI, SiC nanowires, Sol-gel preparation",

author = "Hongjiao Lin and Hejun Li and Qingliang Shen and Xiaohong Shi and Xinfa Tian and Lingjun Guo",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2018",

month = feb,

day = "1",

doi = "10.1016/j.matlet.2017.10.073",

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T1 - Catalyst-free growth of high purity 3C-SiC nanowires film on a graphite paper by sol-gel and ICVI carbothermal reduction

AU - Lin, Hongjiao

AU - Li, Hejun

AU - Shen, Qingliang

AU - Shi, Xiaohong

AU - Tian, Xinfa

AU - Guo, Lingjun

PY - 2018/2/1

Y1 - 2018/2/1

N2 - 3C-SiC nanowires have been synthesized without any catalyst by carbothermal reduction method, which obtained silicon and carbon source from sol-gel impregnation and isothermal chemical vapor immersion (ICVI) process respectively. The microstructure analysis by SEM showed the nanowires with a diameter of ∼200 nm and a length of several millimeters were hierarchical. TEM images and XRD data from the nanowires revealed them to have the cubic 3C-SiC structure. The vapor solid epitaxial mechanism was also proposed to explain the growth process.

AB - 3C-SiC nanowires have been synthesized without any catalyst by carbothermal reduction method, which obtained silicon and carbon source from sol-gel impregnation and isothermal chemical vapor immersion (ICVI) process respectively. The microstructure analysis by SEM showed the nanowires with a diameter of ∼200 nm and a length of several millimeters were hierarchical. TEM images and XRD data from the nanowires revealed them to have the cubic 3C-SiC structure. The vapor solid epitaxial mechanism was also proposed to explain the growth process.

KW - Carbothermal reduction

KW - Crystal growth

KW - ICVI

KW - SiC nanowires

KW - Sol-gel preparation

UR - http://www.scopus.com/inward/record.url?scp=85031921513&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2017.10.073

DO - 10.1016/j.matlet.2017.10.073

M3 - 文章

AN - SCOPUS:85031921513

SN - 0167-577X

VL - 212

SP - 86

EP - 89

JO - Materials Letters

JF - Materials Letters

ER -

Catalyst-free growth of high purity 3C-SiC nanowires film on a graphite paper by sol-gel and ICVI carbothermal reduction

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Keywords

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