Calculation of the High-Temperature Point Defects Structure in Te-Rich CdTe

Shujun Dai; Tao Wang; Huimin Liu; Yihui He; Wanqi Jie

doi:10.1007/s11664-016-4711-2

Calculation of the High-Temperature Point Defects Structure in Te-Rich CdTe

Shujun Dai, Tao Wang, Huimin Liu, Yihui He, Wanqi Jie

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A thermodynamic equilibrium model for CdTe annealed under Te vapor is established, in which possible point defects and a defect reaction existing in undoped and In-doped Te-rich CdTe crystals are taken into consideration. Independent point defects, such as V_Cd, Cd_i, and Te_i, as well as defect complexes, namely Te_Cd-V_Cd (B complex), TeCd2+-VCd2- (D complex), InCd+-VCd- (A-center) and Te_i-V_Cd (Te_Cd), are discussed based on the defect chemistry theory. More specially, the mass action law and quasi-chemical equations are used to calculate defects concentration and Fermi level in undoped and doped CdTe crystals with different indium concentrations. It is found that the Fermi level is controlled by a VCd2-, Te_Cd, and B/D-complex in undoped crystal. The concentration of V_Cd drops down in an obvious manner and that of Te_Cd rises for doped crystal with increasing [In].

Original language	English
Pages (from-to)	4747-4754
Number of pages	8
Journal	Journal of Electronic Materials
Volume	45
Issue number	10
DOIs	https://doi.org/10.1007/s11664-016-4711-2
State	Published - 1 Oct 2016

Keywords

CdTe
compensation
Defect chemistry
defect complex
Fermi level
In-doped

Access to Document

10.1007/s11664-016-4711-2

Cite this

@article{701f944eab364c409bdba99c5036db70,

title = "Calculation of the High-Temperature Point Defects Structure in Te-Rich CdTe",

abstract = "A thermodynamic equilibrium model for CdTe annealed under Te vapor is established, in which possible point defects and a defect reaction existing in undoped and In-doped Te-rich CdTe crystals are taken into consideration. Independent point defects, such as VCd, Cdi, and Tei, as well as defect complexes, namely TeCd-VCd (B complex), TeCd2+-VCd2- (D complex), InCd+-VCd- (A-center) and Tei-VCd (TeCd), are discussed based on the defect chemistry theory. More specially, the mass action law and quasi-chemical equations are used to calculate defects concentration and Fermi level in undoped and doped CdTe crystals with different indium concentrations. It is found that the Fermi level is controlled by a VCd2-, TeCd, and B/D-complex in undoped crystal. The concentration of VCd drops down in an obvious manner and that of TeCd rises for doped crystal with increasing [In].",

keywords = "CdTe, compensation, Defect chemistry, defect complex, Fermi level, In-doped",

author = "Shujun Dai and Tao Wang and Huimin Liu and Yihui He and Wanqi Jie",

note = "Publisher Copyright: {\textcopyright} 2016, The Minerals, Metals & Materials Society.",

year = "2016",

month = oct,

day = "1",

doi = "10.1007/s11664-016-4711-2",

language = "英语",

volume = "45",

pages = "4747--4754",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "10",

}

TY - JOUR

T1 - Calculation of the High-Temperature Point Defects Structure in Te-Rich CdTe

AU - Dai, Shujun

AU - Wang, Tao

AU - Liu, Huimin

AU - He, Yihui

AU - Jie, Wanqi

PY - 2016/10/1

Y1 - 2016/10/1

N2 - A thermodynamic equilibrium model for CdTe annealed under Te vapor is established, in which possible point defects and a defect reaction existing in undoped and In-doped Te-rich CdTe crystals are taken into consideration. Independent point defects, such as VCd, Cdi, and Tei, as well as defect complexes, namely TeCd-VCd (B complex), TeCd2+-VCd2- (D complex), InCd+-VCd- (A-center) and Tei-VCd (TeCd), are discussed based on the defect chemistry theory. More specially, the mass action law and quasi-chemical equations are used to calculate defects concentration and Fermi level in undoped and doped CdTe crystals with different indium concentrations. It is found that the Fermi level is controlled by a VCd2-, TeCd, and B/D-complex in undoped crystal. The concentration of VCd drops down in an obvious manner and that of TeCd rises for doped crystal with increasing [In].

AB - A thermodynamic equilibrium model for CdTe annealed under Te vapor is established, in which possible point defects and a defect reaction existing in undoped and In-doped Te-rich CdTe crystals are taken into consideration. Independent point defects, such as VCd, Cdi, and Tei, as well as defect complexes, namely TeCd-VCd (B complex), TeCd2+-VCd2- (D complex), InCd+-VCd- (A-center) and Tei-VCd (TeCd), are discussed based on the defect chemistry theory. More specially, the mass action law and quasi-chemical equations are used to calculate defects concentration and Fermi level in undoped and doped CdTe crystals with different indium concentrations. It is found that the Fermi level is controlled by a VCd2-, TeCd, and B/D-complex in undoped crystal. The concentration of VCd drops down in an obvious manner and that of TeCd rises for doped crystal with increasing [In].

KW - CdTe

KW - compensation

KW - Defect chemistry

KW - defect complex

KW - Fermi level

KW - In-doped

UR - http://www.scopus.com/inward/record.url?scp=84975142590&partnerID=8YFLogxK

U2 - 10.1007/s11664-016-4711-2

DO - 10.1007/s11664-016-4711-2

M3 - 文章

AN - SCOPUS:84975142590

SN - 0361-5235

VL - 45

SP - 4747

EP - 4754

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 10

ER -

Calculation of the High-Temperature Point Defects Structure in Te-Rich CdTe

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this