Bipolar resistive switching characteristics of cobalt-doped HfO2-based memory films

Tingting Guo; Tingting Tan; Zhengtang Liu

doi:10.1116/1.4953084

Bipolar resistive switching characteristics of cobalt-doped HfO₂-based memory films

Tingting Guo, Tingting Tan, Zhengtang Liu

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

In this work, the resistive switching behavior of HfO₂ and cobalt-doped (Co:HfO₂) films were demonstrated. X-ray photoelectron spectroscopy was used to explore the effect of Co dopants upon the chemical composition of HfO₂ film. Both films showed bipolar resistive switching behaviors, while the Co:HfO₂ film exhibited decreased switching voltages and narrower variations in the switching parameters, including voltages and resistances, than those of the HfO₂ film owing to the modulation of defects. The Pt/Co:HfO₂/Cu device also exhibited an increased ON/OFF ratio because of the increased resistance in the high resistance state, as well as good endurance and retention. The switching mechanisms for the fabricated devices were discussed based on the conductive filament model.

Original language	English
Article number	412141
Journal	Journal of Vacuum Science and Technology B
Volume	34
Issue number	4
DOIs	https://doi.org/10.1116/1.4953084
State	Published - 1 Jul 2016

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@article{5e5961e6be8f4dda97a0981abd207e38,

title = "Bipolar resistive switching characteristics of cobalt-doped HfO2-based memory films",

abstract = "In this work, the resistive switching behavior of HfO2 and cobalt-doped (Co:HfO2) films were demonstrated. X-ray photoelectron spectroscopy was used to explore the effect of Co dopants upon the chemical composition of HfO2 film. Both films showed bipolar resistive switching behaviors, while the Co:HfO2 film exhibited decreased switching voltages and narrower variations in the switching parameters, including voltages and resistances, than those of the HfO2 film owing to the modulation of defects. The Pt/Co:HfO2/Cu device also exhibited an increased ON/OFF ratio because of the increased resistance in the high resistance state, as well as good endurance and retention. The switching mechanisms for the fabricated devices were discussed based on the conductive filament model.",

author = "Tingting Guo and Tingting Tan and Zhengtang Liu",

note = "Publisher Copyright: {\textcopyright} 2016 American Vacuum Society.",

year = "2016",

month = jul,

day = "1",

doi = "10.1116/1.4953084",

language = "英语",

volume = "34",

journal = "Journal of Vacuum Science and Technology B",

issn = "2166-2746",

publisher = "AVS Science and Technology Society",

number = "4",

}

TY - JOUR

T1 - Bipolar resistive switching characteristics of cobalt-doped HfO2-based memory films

AU - Guo, Tingting

AU - Tan, Tingting

AU - Liu, Zhengtang

PY - 2016/7/1

Y1 - 2016/7/1

N2 - In this work, the resistive switching behavior of HfO2 and cobalt-doped (Co:HfO2) films were demonstrated. X-ray photoelectron spectroscopy was used to explore the effect of Co dopants upon the chemical composition of HfO2 film. Both films showed bipolar resistive switching behaviors, while the Co:HfO2 film exhibited decreased switching voltages and narrower variations in the switching parameters, including voltages and resistances, than those of the HfO2 film owing to the modulation of defects. The Pt/Co:HfO2/Cu device also exhibited an increased ON/OFF ratio because of the increased resistance in the high resistance state, as well as good endurance and retention. The switching mechanisms for the fabricated devices were discussed based on the conductive filament model.

AB - In this work, the resistive switching behavior of HfO2 and cobalt-doped (Co:HfO2) films were demonstrated. X-ray photoelectron spectroscopy was used to explore the effect of Co dopants upon the chemical composition of HfO2 film. Both films showed bipolar resistive switching behaviors, while the Co:HfO2 film exhibited decreased switching voltages and narrower variations in the switching parameters, including voltages and resistances, than those of the HfO2 film owing to the modulation of defects. The Pt/Co:HfO2/Cu device also exhibited an increased ON/OFF ratio because of the increased resistance in the high resistance state, as well as good endurance and retention. The switching mechanisms for the fabricated devices were discussed based on the conductive filament model.

UR - http://www.scopus.com/inward/record.url?scp=84973402698&partnerID=8YFLogxK

U2 - 10.1116/1.4953084

DO - 10.1116/1.4953084

M3 - 文章

AN - SCOPUS:84973402698

SN - 2166-2746

VL - 34

JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

IS - 4

M1 - 412141

ER -

Bipolar resistive switching characteristics of cobalt-doped HfO₂-based memory films

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